High aspect ratio gratings fabricated by electrodeposition
Abstract
A method is provided for making gratings of gold or other metal in silicon substrates. The disclosed method may achieve high aspect ratios. According to the disclosed method, a silicon wafer is through-etched. A seed layer of metal is vapor-deposited on one side of the wafer, and a layer of metal is electrodeposited on the seed layer. The electrodeposited metal plugs the trenches and provides a conductive surface for subsequent electrodeposition. The trenches are then filled by electrodeposition from within the trenches, so that the walls of the metal grating grow on the metal plugs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 2293773
- Patent Number(s):
- 11798844
- Application Number:
- 17/503,144
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 10/15/2021
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Arrington, Christian Lew, Dagel, Amber Lynn, Finnegan, Patrick Sean, Hollowell, Andrew E., Young, Travis Ryan, and Baca, Kalin. High aspect ratio gratings fabricated by electrodeposition. United States: N. p., 2023.
Web.
Arrington, Christian Lew, Dagel, Amber Lynn, Finnegan, Patrick Sean, Hollowell, Andrew E., Young, Travis Ryan, & Baca, Kalin. High aspect ratio gratings fabricated by electrodeposition. United States.
Arrington, Christian Lew, Dagel, Amber Lynn, Finnegan, Patrick Sean, Hollowell, Andrew E., Young, Travis Ryan, and Baca, Kalin. Tue .
"High aspect ratio gratings fabricated by electrodeposition". United States. https://www.osti.gov/servlets/purl/2293773.
@article{osti_2293773,
title = {High aspect ratio gratings fabricated by electrodeposition},
author = {Arrington, Christian Lew and Dagel, Amber Lynn and Finnegan, Patrick Sean and Hollowell, Andrew E. and Young, Travis Ryan and Baca, Kalin},
abstractNote = {A method is provided for making gratings of gold or other metal in silicon substrates. The disclosed method may achieve high aspect ratios. According to the disclosed method, a silicon wafer is through-etched. A seed layer of metal is vapor-deposited on one side of the wafer, and a layer of metal is electrodeposited on the seed layer. The electrodeposited metal plugs the trenches and provides a conductive surface for subsequent electrodeposition. The trenches are then filled by electrodeposition from within the trenches, so that the walls of the metal grating grow on the metal plugs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {10}
}
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