Method of chemical doping that uses CMOS-compatible processes
Abstract
A method of Atomic Precision Advanced Manufacturing (APAM) is provided, in which a substrate is doped from a dopant precursor gas. The method involves covering a surface of the substrate with a hard mask, selectively removing material from the hard mask such that selected areas of the substrate surface are laid bare, exposing the laid-bare areas to the dopant precursor gas, and heating the substrate so as to incorporate dopant from the dopant precursor gas into the substrate surface.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 2293772
- Patent Number(s):
- 11798808
- Application Number:
- 17/360,284
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 06/28/2021
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Misra, Shashank, Ward, Daniel Robert, Campbell, DeAnna Marie, Lu, Tzu-Ming, Schmucker, Scott William, Anderson, Evan Michael, Leenheer, Andrew Jay, and Ivie, Jeffrey Andrew. Method of chemical doping that uses CMOS-compatible processes. United States: N. p., 2023.
Web.
Misra, Shashank, Ward, Daniel Robert, Campbell, DeAnna Marie, Lu, Tzu-Ming, Schmucker, Scott William, Anderson, Evan Michael, Leenheer, Andrew Jay, & Ivie, Jeffrey Andrew. Method of chemical doping that uses CMOS-compatible processes. United States.
Misra, Shashank, Ward, Daniel Robert, Campbell, DeAnna Marie, Lu, Tzu-Ming, Schmucker, Scott William, Anderson, Evan Michael, Leenheer, Andrew Jay, and Ivie, Jeffrey Andrew. Tue .
"Method of chemical doping that uses CMOS-compatible processes". United States. https://www.osti.gov/servlets/purl/2293772.
@article{osti_2293772,
title = {Method of chemical doping that uses CMOS-compatible processes},
author = {Misra, Shashank and Ward, Daniel Robert and Campbell, DeAnna Marie and Lu, Tzu-Ming and Schmucker, Scott William and Anderson, Evan Michael and Leenheer, Andrew Jay and Ivie, Jeffrey Andrew},
abstractNote = {A method of Atomic Precision Advanced Manufacturing (APAM) is provided, in which a substrate is doped from a dopant precursor gas. The method involves covering a surface of the substrate with a hard mask, selectively removing material from the hard mask such that selected areas of the substrate surface are laid bare, exposing the laid-bare areas to the dopant precursor gas, and heating the substrate so as to incorporate dopant from the dopant precursor gas into the substrate surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {10}
}
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