Fluorescent conjugated polymers containing semi-ladder units for light-emitting field-effect transistors
Abstract
Materials are provided for use as active emissive layers in organic electronic devices such as light-emitting filed effect transistors. Light-emitting transistors (LET) are an alternative to light-emitting diodes and have several important benefits, however, materials developed specifically for LET are quite scarce. Herein a new family of materials is disclosed that has been developed specifically for LET.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)
- Sponsoring Org.:
- USDOE; National Science Foundation (NSF)
- OSTI Identifier:
- 2293723
- Patent Number(s):
- 11788002
- Application Number:
- 17/097,731
- Assignee:
- The University of Chicago (Chicago, IL)
- DOE Contract Number:
- AC02-06CH11357; 1420709; 1802274; 1834750
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11/13/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Yu, Luping, Awais, Mohammad A., Sharapov, Valerii, and Yuan, Dafei. Fluorescent conjugated polymers containing semi-ladder units for light-emitting field-effect transistors. United States: N. p., 2023.
Web.
Yu, Luping, Awais, Mohammad A., Sharapov, Valerii, & Yuan, Dafei. Fluorescent conjugated polymers containing semi-ladder units for light-emitting field-effect transistors. United States.
Yu, Luping, Awais, Mohammad A., Sharapov, Valerii, and Yuan, Dafei. Tue .
"Fluorescent conjugated polymers containing semi-ladder units for light-emitting field-effect transistors". United States. https://www.osti.gov/servlets/purl/2293723.
@article{osti_2293723,
title = {Fluorescent conjugated polymers containing semi-ladder units for light-emitting field-effect transistors},
author = {Yu, Luping and Awais, Mohammad A. and Sharapov, Valerii and Yuan, Dafei},
abstractNote = {Materials are provided for use as active emissive layers in organic electronic devices such as light-emitting filed effect transistors. Light-emitting transistors (LET) are an alternative to light-emitting diodes and have several important benefits, however, materials developed specifically for LET are quite scarce. Herein a new family of materials is disclosed that has been developed specifically for LET.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 17 00:00:00 EDT 2023},
month = {Tue Oct 17 00:00:00 EDT 2023}
}
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