Two-junction photovoltaic devices

Steiner, Myles Aaron; Friedman, Daniel Joseph; France, Ryan Matthew; Henry, Asegun

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Title: Two-junction photovoltaic devices

Abstract

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Inventors:: Steiner, Myles Aaron; Friedman, Daniel Joseph; France, Ryan Matthew; Henry, Asegun

Issue Date:: 2023-10-03

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States); Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 2293676

Patent Number(s):: 11777047

Application Number:: 17/664,085

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO); Georgia Tech Research Corporation (Atlanta, GA)

DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Resource Relation:: Patent File Date: 05/19/2022

Country of Publication:: United States

Language:: English

Citation Formats


                    Steiner, Myles Aaron, Friedman, Daniel Joseph, France, Ryan Matthew, and Henry, Asegun. Two-junction photovoltaic devices.  United States: N. p., 2023. 
        Web.

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                    Steiner, Myles Aaron, Friedman, Daniel Joseph, France, Ryan Matthew, & Henry, Asegun. Two-junction photovoltaic devices.  United States.

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                    Steiner, Myles Aaron, Friedman, Daniel Joseph, France, Ryan Matthew, and Henry, Asegun. Tue .  
        "Two-junction photovoltaic devices".  United States.  https://www.osti.gov/servlets/purl/2293676.

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@article{osti_2293676,

  title        = {Two-junction photovoltaic devices},

  author       = {Steiner, Myles Aaron and Friedman, Daniel Joseph and France, Ryan Matthew and Henry, Asegun},

  abstractNote = {The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2023},

  month        = {10}

}

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Similar Records

Title: Two-junction photovoltaic devices

Abstract

Citation Formats

Solar Cell Structures for Improved Current Generation and Collection patent-application, September 2014

Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells journal, November 2015

Role of spectral non-idealities in the design of solar thermophotovoltaics journal, January 2014

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Metamorphic epitaxy for multijunction solar cells journal, March 2016

A method of epitaxial growth of a material interface between group III-V materials and silicon wafers providing counterbalancing of residual strains patent-application, December 2017

Inverted Metamorphic Multijunction Solar Cells with Distributed Bragg Reflector patent-application, June 2010

Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells journal, October 2010

Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1−y buffers by molecular beam epitaxy journal, January 2009

Four junction inverted metamorphic multijunction solar cell with a single metamorphic layer patent, March 2015

Optoelectronical Semiconductor Device patent-application, August 2008

Metamorphic Ga 0.76 In 0.24 As/GaAs 0.75 Sb 0.25 tunnel junctions grown on GaAs substrates journal, August 2014

Design Flexibility of Ultrahigh Efficiency Four-Junction Inverted Metamorphic Solar Cells journal, March 2016

Experimental Demonstration of 28.2% Thermophotovoltaic Conversion Efficiency conference, January 2018

Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates journal, April 2004

Thermal energy grid storage using multi-junction photovoltaics journal, January 2019

Thermophotovoltaic systems patent, April 1996

Hot Carrier-Based Near-Field Thermophotovoltaic Energy Conversion journal, February 2017

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells journal, April 2007

Multi-Junction Solar Cell and Use Thereof patent-application, February 2015

Highly efficient GaAs solar cells by limiting light emission angle journal, January 2013

Investigation of InGaAsP-based solar cells for double-junction photovoltaic devices journal, August 2008

Silicon photovoltaic cells in thermophotovoltaic energy conversion conference, January 1978

Thermophotovoltaic system patent, June 1989

Solar Cell Structures for Improved Current Generation and Collection
patent-application, September 2014

Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells
journal, November 2015

Role of spectral non-idealities in the design of solar thermophotovoltaics
journal, January 2014

Thermophotovoltaics: a potential pathway to high efficiency concentrated solar power
journal, January 2016

Metamorphic epitaxy for multijunction solar cells
journal, March 2016

A method of epitaxial growth of a material interface between group III-V materials and silicon wafers providing counterbalancing of residual strains
patent-application, December 2017

Inverted Metamorphic Multijunction Solar Cells with Distributed Bragg Reflector
patent-application, June 2010

Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells
journal, October 2010

Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1−y buffers by molecular beam epitaxy
journal, January 2009

Four junction inverted metamorphic multijunction solar cell with a single metamorphic layer
patent, March 2015

Optoelectronical Semiconductor Device
patent-application, August 2008

Metamorphic Ga _0.76 In _0.24 As/GaAs _0.75 Sb _0.25 tunnel junctions grown on GaAs substrates
journal, August 2014

Design Flexibility of Ultrahigh Efficiency Four-Junction Inverted Metamorphic Solar Cells
journal, March 2016

Experimental Demonstration of 28.2% Thermophotovoltaic Conversion Efficiency
conference, January 2018

Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates
journal, April 2004

Thermal energy grid storage using multi-junction photovoltaics
journal, January 2019

Thermophotovoltaic systems
patent, April 1996

Hot Carrier-Based Near-Field Thermophotovoltaic Energy Conversion
journal, February 2017

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
journal, April 2007

Multi-Junction Solar Cell and Use Thereof
patent-application, February 2015

Highly efficient GaAs solar cells by limiting light emission angle
journal, January 2013

Investigation of InGaAsP-based solar cells for double-junction photovoltaic devices
journal, August 2008

Silicon photovoltaic cells in thermophotovoltaic energy conversion
conference, January 1978

Thermophotovoltaic system
patent, June 1989