Screening method for pin diodes used in microwave limiters
Abstract
A method of testing a PIN diode for a power limiter circuit comprises measuring a reverse bias current of the PIN diode; applying a reverse bias voltage to the PIN diode; increasing the reverse bias voltage until the reverse bias current of the PIN diode reaches a threshold current indicative of a reverse voltage breakdown; and determining whether the reverse bias breakdown voltage of the PIN diode is within an acceptable range of reverse bias breakdown voltages corresponding to a power range at which the power limiter circuit would enter power limiting mode with the PIN diode.
- Inventors:
- Issue Date:
- Research Org.:
- Kansas City Plant (KCP), Kansas City, MO (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 2222212
- Patent Number(s):
- 11733296
- Application Number:
- 16/851,328
- Assignee:
- Honeywell Federal Manufacturing & Technologies, LLC (Kansas City, MO)
- DOE Contract Number:
- NA0002839
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 04/17/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Hanna, Charles John, Nguyen, Tuan N., and Plamann, Will Schulte. Screening method for pin diodes used in microwave limiters. United States: N. p., 2023.
Web.
Hanna, Charles John, Nguyen, Tuan N., & Plamann, Will Schulte. Screening method for pin diodes used in microwave limiters. United States.
Hanna, Charles John, Nguyen, Tuan N., and Plamann, Will Schulte. Tue .
"Screening method for pin diodes used in microwave limiters". United States. https://www.osti.gov/servlets/purl/2222212.
@article{osti_2222212,
title = {Screening method for pin diodes used in microwave limiters},
author = {Hanna, Charles John and Nguyen, Tuan N. and Plamann, Will Schulte},
abstractNote = {A method of testing a PIN diode for a power limiter circuit comprises measuring a reverse bias current of the PIN diode; applying a reverse bias voltage to the PIN diode; increasing the reverse bias voltage until the reverse bias current of the PIN diode reaches a threshold current indicative of a reverse voltage breakdown; and determining whether the reverse bias breakdown voltage of the PIN diode is within an acceptable range of reverse bias breakdown voltages corresponding to a power range at which the power limiter circuit would enter power limiting mode with the PIN diode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {8}
}
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Works referenced in this record:
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Radio frequency power limiter with reflected power detection
patent, March 2021
- Montgomery, Byron J.
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Method of making a low noise semiconductor device comprising a screening measurement
patent, November 1997
- Martin, Samuel Suresh; Trambarulo, Ralph F.; Tran, Cuong
- US Patent Document 5,683,917