Ultra low noise materials and devices for cryogenic superconductors and quantum bits
Abstract
Materials, products, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in products such as superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably essentially devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 2222127
- Patent Number(s):
- 11727296
- Application Number:
- 16/379,651
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 04/09/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Pereverzev, Sergey. Ultra low noise materials and devices for cryogenic superconductors and quantum bits. United States: N. p., 2023.
Web.
Pereverzev, Sergey. Ultra low noise materials and devices for cryogenic superconductors and quantum bits. United States.
Pereverzev, Sergey. Tue .
"Ultra low noise materials and devices for cryogenic superconductors and quantum bits". United States. https://www.osti.gov/servlets/purl/2222127.
@article{osti_2222127,
title = {Ultra low noise materials and devices for cryogenic superconductors and quantum bits},
author = {Pereverzev, Sergey},
abstractNote = {Materials, products, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in products such as superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably essentially devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {8}
}
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