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Title: Multifunctional RF limiting amplifier

Abstract

Multifunctional RF limiting amplifiers having various configurations and functions are disclosed. In a first configuration, the RF limiting amplifier includes an active load output circuit that allows one to adjust the output impedance based upon the anticipated connected load impedance. In a second configuration, the RF limiting amplifier includes a pair of emitter-followers to buffer the output of a first stage, allowing the RF limiting amplifier to drive one or more second stages. A third configuration includes a pair of RF limiting amplifiers with their outputs mixed to implement a down conversion function. The third configuration may be used to drive dual SAW resonators for detecting the presence of biological or chemical agents. The RF limiting amplifier may be implemented in either bipolar junction transistors or CMOS transistors.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
2222096
Patent Number(s):
11722106
Application Number:
16/952,745
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 11/19/2020
Country of Publication:
United States
Language:
English

Citation Formats

Wessendorf, Kurt O., and Branch, Darren W. Multifunctional RF limiting amplifier. United States: N. p., 2023. Web.
Wessendorf, Kurt O., & Branch, Darren W. Multifunctional RF limiting amplifier. United States.
Wessendorf, Kurt O., and Branch, Darren W. Tue . "Multifunctional RF limiting amplifier". United States. https://www.osti.gov/servlets/purl/2222096.
@article{osti_2222096,
title = {Multifunctional RF limiting amplifier},
author = {Wessendorf, Kurt O. and Branch, Darren W.},
abstractNote = {Multifunctional RF limiting amplifiers having various configurations and functions are disclosed. In a first configuration, the RF limiting amplifier includes an active load output circuit that allows one to adjust the output impedance based upon the anticipated connected load impedance. In a second configuration, the RF limiting amplifier includes a pair of emitter-followers to buffer the output of a first stage, allowing the RF limiting amplifier to drive one or more second stages. A third configuration includes a pair of RF limiting amplifiers with their outputs mixed to implement a down conversion function. The third configuration may be used to drive dual SAW resonators for detecting the presence of biological or chemical agents. The RF limiting amplifier may be implemented in either bipolar junction transistors or CMOS transistors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {8}
}

Works referenced in this record:

Surface Acoustic Wave (SAW) for Chemical Sensing Applications of Recognition Layers
journal, November 2017


Power Amplifier Circuit
patent-application, December 2018


Power Amplifier Circuit
patent-application, June 2017


Power Amplifier Circuit
patent-application, June 2020