Liquid semiconductor-halogen based electronics
Abstract
According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 2222050
- Patent Number(s):
- 11721771
- Application Number:
- 15/812,682
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11/14/2017
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Voss, Lars, Frye, Clint, Henderson, Roger A., Murphy, John Winter, Nikolic, Rebecca J., Qu, Dongxia, Shao, Qinghui, and Stoyer, Mark A. Liquid semiconductor-halogen based electronics. United States: N. p., 2023.
Web.
Voss, Lars, Frye, Clint, Henderson, Roger A., Murphy, John Winter, Nikolic, Rebecca J., Qu, Dongxia, Shao, Qinghui, & Stoyer, Mark A. Liquid semiconductor-halogen based electronics. United States.
Voss, Lars, Frye, Clint, Henderson, Roger A., Murphy, John Winter, Nikolic, Rebecca J., Qu, Dongxia, Shao, Qinghui, and Stoyer, Mark A. Tue .
"Liquid semiconductor-halogen based electronics". United States. https://www.osti.gov/servlets/purl/2222050.
@article{osti_2222050,
title = {Liquid semiconductor-halogen based electronics},
author = {Voss, Lars and Frye, Clint and Henderson, Roger A. and Murphy, John Winter and Nikolic, Rebecca J. and Qu, Dongxia and Shao, Qinghui and Stoyer, Mark A.},
abstractNote = {According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {8}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Impurity dependence of the viscosity of liquid selenium
journal, October 1982
- Perron, J. C.; Rabit, J.; Rialland, J. F.
- Philosophical Magazine B, Vol. 46, Issue 4
Electronic Properties of Liquid Selenium Containing Alkali and Halogen Impurities
journal, December 1985
- Hosokawa, Shinya; Yao, Makoto; Yoshimura, Toshiyuki
- Journal of the Physical Society of Japan, Vol. 54, Issue 12
Liquid semiconductors
journal, February 1990
- Enderby, J. E.; Barnes, A. C.
- Reports on Progress in Physics, Vol. 53, Issue 2
Mass Production Method of Loading Radioisotopes into Radiovoltaics
patent-application, February 2017
- Kwon, Jae Wan; Gahl, John Michel; Nullmeyer, Bradley Ryan
- US Patent Application 15/302628; 20170032862
Betavoltaic cell
patent-application, April 2007
- Chandrashekhar, Mvs; Thomas, Christopher; Spencer, Michael G.
- US Patent Application 11/509323; 20070080605
Mechanisms Leading to Losses in Conventional Betavoltaics and Evolution: Utilizing Composite Semiconductor With Infused Radioisotope for Efficiency Improvement
journal, February 2014
- Wacharasindhu, Tongtawee; Nullmeyer, Bradley R.; Kwon, Jae W.
- Journal of Microelectromechanical Systems, Vol. 23, Issue 1
Radioisotope microbattery based on liquid semiconductor
journal, July 2009
- Wacharasindhu, T.; Kwon, J. W.; Meier, D. E.
- Applied Physics Letters, Vol. 95, Issue 1