Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching
Abstract
A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of New Mexico, Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 2222038
- Patent Number(s):
- 11715635
- Application Number:
- 17/525,516
- Assignee:
- UNM Rainforest Innovations (Albuquerque, NM)
- DOE Contract Number:
- AR0000869
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11/12/2021
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Monavarian, Morteza, Feezell, Daniel, Aragon, Andrew, Mishkat-Ul-Masabih, Saadat, Allerman, Andrew, Armstrong, Andrew, and Crawford, Mary. Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching. United States: N. p., 2023.
Web.
Monavarian, Morteza, Feezell, Daniel, Aragon, Andrew, Mishkat-Ul-Masabih, Saadat, Allerman, Andrew, Armstrong, Andrew, & Crawford, Mary. Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching. United States.
Monavarian, Morteza, Feezell, Daniel, Aragon, Andrew, Mishkat-Ul-Masabih, Saadat, Allerman, Andrew, Armstrong, Andrew, and Crawford, Mary. Tue .
"Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching". United States. https://www.osti.gov/servlets/purl/2222038.
@article{osti_2222038,
title = {Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching},
author = {Monavarian, Morteza and Feezell, Daniel and Aragon, Andrew and Mishkat-Ul-Masabih, Saadat and Allerman, Andrew and Armstrong, Andrew and Crawford, Mary},
abstractNote = {A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {8}
}
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