Preparation of III-V semiconductor nanocrystals
Abstract
Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 215237
- Patent Number(s):
- 5505928
- Application Number:
- PAN: 8-231,345
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 9 Apr 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; CHEMICAL PREPARATION; GRAIN SIZE; CRYSTAL GROWTH; QUINOLINES
Citation Formats
Alivisatos, A P, and Olshavsky, M A. Preparation of III-V semiconductor nanocrystals. United States: N. p., 1996.
Web.
Alivisatos, A P, & Olshavsky, M A. Preparation of III-V semiconductor nanocrystals. United States.
Alivisatos, A P, and Olshavsky, M A. Tue .
"Preparation of III-V semiconductor nanocrystals". United States.
@article{osti_215237,
title = {Preparation of III-V semiconductor nanocrystals},
author = {Alivisatos, A P and Olshavsky, M A},
abstractNote = {Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {4}
}
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