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Title: Preparation of III-V semiconductor nanocrystals

Abstract

Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

Inventors:
;
Issue Date:
Research Org.:
University of California
Sponsoring Org.:
USDOE
OSTI Identifier:
215237
Patent Number(s):
5,505,928
Application Number:
PAN: 8-231,345
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 9 Apr 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; CHEMICAL PREPARATION; GRAIN SIZE; CRYSTAL GROWTH; QUINOLINES

Citation Formats

Alivisatos, A P, and Olshavsky, M A. Preparation of III-V semiconductor nanocrystals. United States: N. p., 1996. Web.
Alivisatos, A P, & Olshavsky, M A. Preparation of III-V semiconductor nanocrystals. United States.
Alivisatos, A P, and Olshavsky, M A. Tue . "Preparation of III-V semiconductor nanocrystals". United States.
@article{osti_215237,
title = {Preparation of III-V semiconductor nanocrystals},
author = {Alivisatos, A P and Olshavsky, M A},
abstractNote = {Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {4}
}