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Title: Preparation of III-V semiconductor nanocrystals

Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.
Inventors:
;
Issue Date:
OSTI Identifier:
215237
Assignee:
Univ. of California, Oakland, CA (United States) OAK; SCA: 360601; PA: EDB-96:073120; SN: 96001569526
Patent Number(s):
US 5,505,928/A/
Application Number:
PAN: 8-231,345
Contract Number:
AC03-76SF00098
Resource Relation:
Other Information: PBD: 9 Apr 1996
Research Org:
University of California
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; CHEMICAL PREPARATION; GRAIN SIZE; CRYSTAL GROWTH; QUINOLINES