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Title: Method for materials deposition by ablation transfer processing

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs. 1 fig.
Inventors:
Issue Date:
OSTI Identifier:
215235
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 360101; 360201; 360601; 320303; PA: EDB-96:072687; SN: 96001569521
Patent Number(s):
US 5,508,065/A/
Application Number:
PAN: 8-323,327
Contract Number:
W-7405-ENG-48
Resource Relation:
Other Information: PBD: 16 Apr 1996
Research Org:
University of California
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; SEMICONDUCTOR MATERIALS; ENERGY BEAM DEPOSITION; METALS; INDUSTRIAL PLANTS; WASTE MANAGEMENT; THIN FILMS; AMBIENT TEMPERATURE; USES; WASTES