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Title: Efficient semiconductor light-emitting device and method

Abstract

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia Corporation
OSTI Identifier:
201524
Patent Number(s):
5,493,577
Application Number:
PAN: 8-361,252
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 20 Feb 1996
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; LIGHT EMITTING DIODES; DESIGN; SEMICONDUCTOR LASERS; SEMICONDUCTOR DIODES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; PERFORMANCE

Citation Formats

Choquette, K D, Lear, K L, and Schneider, Jr, R P. Efficient semiconductor light-emitting device and method. United States: N. p., 1996. Web.
Choquette, K D, Lear, K L, & Schneider, Jr, R P. Efficient semiconductor light-emitting device and method. United States.
Choquette, K D, Lear, K L, and Schneider, Jr, R P. Tue . "Efficient semiconductor light-emitting device and method". United States.
@article{osti_201524,
title = {Efficient semiconductor light-emitting device and method},
author = {Choquette, K D and Lear, K L and Schneider, Jr, R P},
abstractNote = {A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {2}
}