High temperature and high pressure AlGaN/GaN electronics
Abstract
Disclosed herein are devices, systems and methods useful for downhole sensors and electronics suitable for harsh thermal and mechanical environment associated with high-temperature geothermal drilling and high-temperature/high-pressure oil and gas drilling.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1998505
- Patent Number(s):
- 11680476
- Application Number:
- 16/715,877
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 12/16/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Ginley, David Samuel, Parilla, Philip Anthony, and Friedman, Daniel Joseph. High temperature and high pressure AlGaN/GaN electronics. United States: N. p., 2023.
Web.
Ginley, David Samuel, Parilla, Philip Anthony, & Friedman, Daniel Joseph. High temperature and high pressure AlGaN/GaN electronics. United States.
Ginley, David Samuel, Parilla, Philip Anthony, and Friedman, Daniel Joseph. Tue .
"High temperature and high pressure AlGaN/GaN electronics". United States. https://www.osti.gov/servlets/purl/1998505.
@article{osti_1998505,
title = {High temperature and high pressure AlGaN/GaN electronics},
author = {Ginley, David Samuel and Parilla, Philip Anthony and Friedman, Daniel Joseph},
abstractNote = {Disclosed herein are devices, systems and methods useful for downhole sensors and electronics suitable for harsh thermal and mechanical environment associated with high-temperature geothermal drilling and high-temperature/high-pressure oil and gas drilling.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {6}
}
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