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Title: Heterogeneous integration of an electro-optical platform

Abstract

A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1998483
Patent Number(s):
11675126
Application Number:
17/221,949
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 04/05/2021
Country of Publication:
United States
Language:
English

Citation Formats

Kodigala, Ashok, Lentine, Anthony L., Boynton, Nicholas, Trotter, Douglas Chandler, Friedmann, Thomas A., and Weiner, Philip Harrison. Heterogeneous integration of an electro-optical platform. United States: N. p., 2023. Web.
Kodigala, Ashok, Lentine, Anthony L., Boynton, Nicholas, Trotter, Douglas Chandler, Friedmann, Thomas A., & Weiner, Philip Harrison. Heterogeneous integration of an electro-optical platform. United States.
Kodigala, Ashok, Lentine, Anthony L., Boynton, Nicholas, Trotter, Douglas Chandler, Friedmann, Thomas A., and Weiner, Philip Harrison. Tue . "Heterogeneous integration of an electro-optical platform". United States. https://www.osti.gov/servlets/purl/1998483.
@article{osti_1998483,
title = {Heterogeneous integration of an electro-optical platform},
author = {Kodigala, Ashok and Lentine, Anthony L. and Boynton, Nicholas and Trotter, Douglas Chandler and Friedmann, Thomas A. and Weiner, Philip Harrison},
abstractNote = {A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {6}
}

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