Plasma-based method for delayering of circuits
Abstract
The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1998425
- Patent Number(s):
- 11664238
- Application Number:
- 16/941,676
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 07/29/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Shul, Randy J., Friedman, Caitlin Rochford, Salazar, Gregory Paul, Rye, Michael J., Sniegowski, Jeffry Joseph, and Greth, Karl Douglas. Plasma-based method for delayering of circuits. United States: N. p., 2023.
Web.
Shul, Randy J., Friedman, Caitlin Rochford, Salazar, Gregory Paul, Rye, Michael J., Sniegowski, Jeffry Joseph, & Greth, Karl Douglas. Plasma-based method for delayering of circuits. United States.
Shul, Randy J., Friedman, Caitlin Rochford, Salazar, Gregory Paul, Rye, Michael J., Sniegowski, Jeffry Joseph, and Greth, Karl Douglas. Tue .
"Plasma-based method for delayering of circuits". United States. https://www.osti.gov/servlets/purl/1998425.
@article{osti_1998425,
title = {Plasma-based method for delayering of circuits},
author = {Shul, Randy J. and Friedman, Caitlin Rochford and Salazar, Gregory Paul and Rye, Michael J. and Sniegowski, Jeffry Joseph and Greth, Karl Douglas},
abstractNote = {The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {5}
}
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