Engineered current-density profile diode laser
Abstract
The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1998413
- Patent Number(s):
- 11658460
- Application Number:
- 17/041,256
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 03/26/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Leisher, Paul O., Deri, Robert J., and Patra, Susant K. Engineered current-density profile diode laser. United States: N. p., 2023.
Web.
Leisher, Paul O., Deri, Robert J., & Patra, Susant K. Engineered current-density profile diode laser. United States.
Leisher, Paul O., Deri, Robert J., and Patra, Susant K. Tue .
"Engineered current-density profile diode laser". United States. https://www.osti.gov/servlets/purl/1998413.
@article{osti_1998413,
title = {Engineered current-density profile diode laser},
author = {Leisher, Paul O. and Deri, Robert J. and Patra, Susant K.},
abstractNote = {The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {5}
}
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