Device architectures having engineered stresses

Steiner, Myles Aaron

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Title: Device architectures having engineered stresses

Abstract

The present disclosure relates to a method that includes depositing a spalling layer onto a surface that includes a substrate, depositing a device comprising a III-V material onto the spalling layer, resulting in the forming of a stack, and dividing the stack substantially at a plane positioned within the spalling layer to form a first portion that includes the substrate and a second portion that includes the PV device, where the spalling layer includes a first layer configured to provide a compressive stress and a second layer configured to provide a tensile stress, the first layer and the second layer form an interface, the dividing occurs as result of the interface, and the compressive stress and the tensile stress are strain-balanced so that a total strain within the spalling layer is approximately zero.

Inventors:: Steiner, Myles Aaron

Issue Date:: 2023-05-23

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1998410

Patent Number(s):: 11658258

Application Number:: 17/484,578

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Resource Relation:: Patent File Date: 09/24/2021

Country of Publication:: United States

Language:: English

Citation Formats


                    Steiner, Myles Aaron. Device architectures having engineered stresses.  United States: N. p., 2023. 
        Web.

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                    Steiner, Myles Aaron. Device architectures having engineered stresses.  United States.

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                    Steiner, Myles Aaron. Tue .  
        "Device architectures having engineered stresses".  United States.  https://www.osti.gov/servlets/purl/1998410.

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@article{osti_1998410,

  title        = {Device architectures having engineered stresses},

  author       = {Steiner, Myles Aaron},

  abstractNote = {The present disclosure relates to a method that includes depositing a spalling layer onto a surface that includes a substrate, depositing a device comprising a III-V material onto the spalling layer, resulting in the forming of a stack, and dividing the stack substantially at a plane positioned within the spalling layer to form a first portion that includes the substrate and a second portion that includes the PV device, where the spalling layer includes a first layer configured to provide a compressive stress and a second layer configured to provide a tensile stress, the first layer and the second layer form an interface, the dividing occurs as result of the interface, and the compressive stress and the tensile stress are strain-balanced so that a total strain within the spalling layer is approximately zero.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2023},

  month        = {5}

}

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