Title: Low-leakage regrown GaN p-n junctions for GaN power devices

Abstract

Fabricating a regrown GaN p-n junction includes depositing a n-GaN layer on a substrate including n⁺-GaN, etching a surface of the n-GaN layer to yield an etched surface, depositing a p-GaN layer on the etched surface, etching a portion of the n-GaN layer and a portion of the p-GaN layer to yield a mesa opposite the substrate, and passivating a portion of the p-GaN layer around an edge of the mesa. The regrown GaN p-n junction is defined at an interface between the n-GaN layer and the p-GaN layer. The regrown GaN p-n junction includes a substrate, a n-GaN layer on the substrate having an etched surface, a p-GaN layer on the etched surface, a mesa defined by an etched portion of the n-GaN layer and an etched portion of the p-GaN layer, and a passivated portion of the p-GaN layer around an edge of the mesa.

Inventors:

Zhao, Yuji; Fu, Kai; Fu, Houqiang

Issue Date:

2023-04-11

Research Org.:

Arizona State Univ., Tempe, AZ (United States)

Sponsoring Org.:

USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:

1998290

Patent Number(s):

11626483

Application Number:

17/031,342

Assignee:

Arizona Board of Regents on behalf of Arizona State University (Scottsdale, AZ)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02057 - {Cleaning during device manufacture}
H01L21/02389 - {Nitrides}
H01L21/02458 - {Nitrides}
H01L21/0254 - {Nitrides}
H01L21/02576 - {N-type}
H01L21/02579 - {P-type}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02634 - {Homoepitaxy}
H01L21/02658 - {Pretreatments
H01L21/3006 - {of AIIIBV compounds}
H01L21/30612 - {Etching of AIIIBV compounds}
H01L21/30621 - {Vapour phase etching}
H01L21/3245 - {of AIIIBV compounds}
H01L29/0619 - {with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction}
H01L29/0623 - {Buried supplementary region, e.g. buried guard ring
H01L29/0661 - {specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching}
H01L29/2003 - {Nitride compounds}
H01L29/735 - Lateral transistors
H01L29/7393 - {Insulated gate bipolar mode transistors, i.e. IGBT
H01L29/8083 - {Vertical transistors
H01L29/8611 - {Planar PN junction diodes}
H01L29/872 - Schottky diodes

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DOE Contract Number:  

AR0000868

Resource Type:

Patent

Resource Relation:

Patent File Date: 09/24/2020

Country of Publication:

United States

Language:

English