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Title: Water soluble oxide liftoff layers for GaAs photovoltaics

Abstract

Disclosed herein are compositions, methods and devices that allow for water-soluble epitaxial lift-off of III-V. Epitaxial growth of STO/SAO templates on STO (001) and Ge (001) substrates were demonstrated. Partially epitaxial GaAs growth was achieved on STO/SAO/STO substrate templates.

Inventors:
Issue Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1998265
Patent Number(s):
11621365
Application Number:
16/904,267
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/17/2020
Country of Publication:
United States
Language:
English

Citation Formats

Norman, Andrew Gordon. Water soluble oxide liftoff layers for GaAs photovoltaics. United States: N. p., 2023. Web.
Norman, Andrew Gordon. Water soluble oxide liftoff layers for GaAs photovoltaics. United States.
Norman, Andrew Gordon. Tue . "Water soluble oxide liftoff layers for GaAs photovoltaics". United States. https://www.osti.gov/servlets/purl/1998265.
@article{osti_1998265,
title = {Water soluble oxide liftoff layers for GaAs photovoltaics},
author = {Norman, Andrew Gordon},
abstractNote = {Disclosed herein are compositions, methods and devices that allow for water-soluble epitaxial lift-off of III-V. Epitaxial growth of STO/SAO templates on STO (001) and Ge (001) substrates were demonstrated. Partially epitaxial GaAs growth was achieved on STO/SAO/STO substrate templates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {4}
}

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