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Title: Systems and methods of electron beam induced processing

Abstract

Embodiments of the present disclosure provide for methods and systems for making structures using an electrospray system while under vacuum. In particular, embodiments of the present disclosure provide for methods and systems for ultra-fast growth of high aspect ratio nano/meso/micro-structures with three dimensional topological complexity and control of phase and composition of the structure formed.

Inventors:
Issue Date:
Research Org.:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1987157
Patent Number(s):
11583875
Application Number:
17/223,620
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
DOE Contract Number:  
SC0010729
Resource Type:
Patent
Resource Relation:
Patent File Date: 04/06/2021
Country of Publication:
United States
Language:
English

Citation Formats

Fedorov, Andrei G. Systems and methods of electron beam induced processing. United States: N. p., 2023. Web.
Fedorov, Andrei G. Systems and methods of electron beam induced processing. United States.
Fedorov, Andrei G. Tue . "Systems and methods of electron beam induced processing". United States. https://www.osti.gov/servlets/purl/1987157.
@article{osti_1987157,
title = {Systems and methods of electron beam induced processing},
author = {Fedorov, Andrei G.},
abstractNote = {Embodiments of the present disclosure provide for methods and systems for making structures using an electrospray system while under vacuum. In particular, embodiments of the present disclosure provide for methods and systems for ultra-fast growth of high aspect ratio nano/meso/micro-structures with three dimensional topological complexity and control of phase and composition of the structure formed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {2}
}

Works referenced in this record:

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Method and Apparatus for Providing Beams of Nanodroplets for High Sputtering Rate of Inert Materials
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