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Title: Inorganic ternary halide semiconductors for hard radiation detection

Abstract

Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB2X5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.

Inventors:
; ; ;
Issue Date:
Research Org.:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1986945
Patent Number(s):
11531124
Application Number:
16/318,254
Assignee:
Northwestern University (Evanston, IL)
DOE Contract Number:  
NA0002522
Resource Type:
Patent
Resource Relation:
Patent File Date: 07/21/2017
Country of Publication:
United States
Language:
English

Citation Formats

Kanatzidis, Mercouri G., Wessels, Bruce W., Liu, Zhifu, and Lin, Wenwen. Inorganic ternary halide semiconductors for hard radiation detection. United States: N. p., 2022. Web.
Kanatzidis, Mercouri G., Wessels, Bruce W., Liu, Zhifu, & Lin, Wenwen. Inorganic ternary halide semiconductors for hard radiation detection. United States.
Kanatzidis, Mercouri G., Wessels, Bruce W., Liu, Zhifu, and Lin, Wenwen. Tue . "Inorganic ternary halide semiconductors for hard radiation detection". United States. https://www.osti.gov/servlets/purl/1986945.
@article{osti_1986945,
title = {Inorganic ternary halide semiconductors for hard radiation detection},
author = {Kanatzidis, Mercouri G. and Wessels, Bruce W. and Liu, Zhifu and Lin, Wenwen},
abstractNote = {Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB2X5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {12}
}

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