Avalanche photodiode and an optical receiver having the same
Abstract
Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.
- Inventors:
- Issue Date:
- Research Org.:
- Hewlett Packard Enterprise Development LP, Spring, TX (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1986814
- Patent Number(s):
- 11502215
- Application Number:
- 17/249,192
- Assignee:
- Hewlett Packard Enterprise Development LP (Spring, TX)
- DOE Contract Number:
- AR0001039
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 02/23/2021
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Yuan, Yuan, Liang, Di, Zeng, Xiaoge, and Huang, Zhihong. Avalanche photodiode and an optical receiver having the same. United States: N. p., 2022.
Web.
Yuan, Yuan, Liang, Di, Zeng, Xiaoge, & Huang, Zhihong. Avalanche photodiode and an optical receiver having the same. United States.
Yuan, Yuan, Liang, Di, Zeng, Xiaoge, and Huang, Zhihong. Tue .
"Avalanche photodiode and an optical receiver having the same". United States. https://www.osti.gov/servlets/purl/1986814.
@article{osti_1986814,
title = {Avalanche photodiode and an optical receiver having the same},
author = {Yuan, Yuan and Liang, Di and Zeng, Xiaoge and Huang, Zhihong},
abstractNote = {Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {11}
}
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