Title: Metallo-graphene nanocomposites and methods for using metallo-graphene nanocomposites for electromagnetic energy conversion

Abstract

Nanocomposites in accordance with many embodiments of the invention can be capable of converting electromagnetic radiation to an electric signal, such as signals in the form of current or voltage. In some embodiments, metallic nanostructures are integrated with graphene material to form a metallo-graphene nanocomposite. Graphene is a material that has been explored for broadband and ultrafast photodetection applications because of its distinct optical and electronic characteristics. However, the low optical absorption and the short carrier lifetime of graphene can limit its use in many applications. Nanocomposites in accordance with various embodiments of the invention integrates metallic nanostructures, such as (but not limited to) plasmonic nanoantennas and metallic nanoparticles, with a graphene-based material to form metallo-graphene nanostructures that can offer high responsivity, ultrafast temporal responses, and broadband operation in a variety of optoelectronic applications.

Inventors:

Jarrahi, Mona; Cakmakyapan, Semih

Issue Date:

2022-09-27

Research Org.:

Univ. of California, Los Angeles, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1925148

Patent Number(s):

11456392

Application Number:

16/617,473

Assignee:

The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES

H01B1/00 - Conductors or conductive bodies characterised by the conductive materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/022408 - {for devices characterised by at least one potential jump barrier or surface barrier}
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/02327 - {the optical elements being integrated or being directly associated to the device, e.g. back reflectors
H01L31/028 - including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L31/032 - including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
H01L31/035281 - {Shape of the body}
H01L31/03529 - {Shape of the potential jump barrier or surface barrier}
H01L31/03845 - {comprising semiconductor nanoparticles embedded in a semiconductor matrix
H01L31/07 - the potential barriers being only of the Schottky type
H01L31/112 - characterised by field-effect operation, e.g. junction field-effect phototransistor
H01L31/1136 - {the device being a metal-insulator-semiconductor field-effect transistor}

H - ELECTRICITY H02 - GENERATION H02S - GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES

H02S10/30 - Thermophotovoltaic systems

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/547 - Monocrystalline silicon PV cells

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DOE Contract Number:  

SC0016925

Resource Type:

Patent

Resource Relation:

Patent File Date: 06/01/2018

Country of Publication:

United States

Language:

English