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Title: Thermally sensitive ionic redox transistor

Abstract

A thermally sensitive ionic redox transistor comprises a solid channel, a solid reservoir layer, and a solid electrolyte layer disposed between the channel and the reservoir layer. A conductance of the channel is varied by changing the concentration of ions such as oxygen vacancies in the channel layer. Ionic conductivity of the gate, electrolyte, and channel layers increase with increasing temperature. Ion or vacancy transport between the channel and the reservoir layer across the electrolyte layer occurs in response to applying a voltage between the channel and the reservoir layer when the device is heated to an elevated temperature. When the device is cooled below the elevated temperature, the ions are trapped in one or more of the layers because the materials lose their ionic conductivity. A state of the redox transistor can be read by measuring the conductance of the channel.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1925127
Patent Number(s):
11450802
Application Number:
16/854,151
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 04/21/2020
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING

Citation Formats

Li, Yiyang, Talin, Albert Alec, and Fuller, Elliot James. Thermally sensitive ionic redox transistor. United States: N. p., 2022. Web.
Li, Yiyang, Talin, Albert Alec, & Fuller, Elliot James. Thermally sensitive ionic redox transistor. United States.
Li, Yiyang, Talin, Albert Alec, and Fuller, Elliot James. Tue . "Thermally sensitive ionic redox transistor". United States. https://www.osti.gov/servlets/purl/1925127.
@article{osti_1925127,
title = {Thermally sensitive ionic redox transistor},
author = {Li, Yiyang and Talin, Albert Alec and Fuller, Elliot James},
abstractNote = {A thermally sensitive ionic redox transistor comprises a solid channel, a solid reservoir layer, and a solid electrolyte layer disposed between the channel and the reservoir layer. A conductance of the channel is varied by changing the concentration of ions such as oxygen vacancies in the channel layer. Ionic conductivity of the gate, electrolyte, and channel layers increase with increasing temperature. Ion or vacancy transport between the channel and the reservoir layer across the electrolyte layer occurs in response to applying a voltage between the channel and the reservoir layer when the device is heated to an elevated temperature. When the device is cooled below the elevated temperature, the ions are trapped in one or more of the layers because the materials lose their ionic conductivity. A state of the redox transistor can be read by measuring the conductance of the channel.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {9}
}

Works referenced in this record:

Ionic floating-gate memory device
patent, December 2019


Semiconductor device including variable resistance element
patent-application, June 2021


Electrochemical device of variable electrical conductance
patent-application, April 2021


Tunable ionic electronic transistor
patent, October 2019


Optoelectronic memristor devices
patent-application, January 2020