Conductive strip based mask for metallization of semiconductor devices
Abstract
Methods of manufacturing a semiconductor device, and resulting semiconductor device are described. In an example, the method for manufacturing a semiconductor device include forming a semiconductor region and forming a metal seed region over the semiconductor region. The method can include placing a conductive strip over a first portion of the metal region, where the conductive strip is formed over the semiconductor region. The method can include bonding a contacting portion of the conductive strip to the first portion the metal region. The method can include etching a second portion of the metal region and where the conductive strip inhibits etching of the first portion of the metal region. In an example, the conductive strip can have a coating. In one example, the semiconductor device can be a solar cell.
- Inventors:
- Issue Date:
- Research Org.:
- Total Marketing Services, Puteaux (France)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1925109
- Patent Number(s):
- 11444214
- Application Number:
- 17/099,536
- Assignee:
- Total Marketing Services (Puteaux, FR)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EE0008175
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11/16/2020
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 14 SOLAR ENERGY
Citation Formats
Harder, Nils-Peter. Conductive strip based mask for metallization of semiconductor devices. United States: N. p., 2022.
Web.
Harder, Nils-Peter. Conductive strip based mask for metallization of semiconductor devices. United States.
Harder, Nils-Peter. Tue .
"Conductive strip based mask for metallization of semiconductor devices". United States. https://www.osti.gov/servlets/purl/1925109.
@article{osti_1925109,
title = {Conductive strip based mask for metallization of semiconductor devices},
author = {Harder, Nils-Peter},
abstractNote = {Methods of manufacturing a semiconductor device, and resulting semiconductor device are described. In an example, the method for manufacturing a semiconductor device include forming a semiconductor region and forming a metal seed region over the semiconductor region. The method can include placing a conductive strip over a first portion of the metal region, where the conductive strip is formed over the semiconductor region. The method can include bonding a contacting portion of the conductive strip to the first portion the metal region. The method can include etching a second portion of the metal region and where the conductive strip inhibits etching of the first portion of the metal region. In an example, the conductive strip can have a coating. In one example, the semiconductor device can be a solar cell.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {9}
}
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