Title: Doped gate dielectrics materials

Abstract

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

Inventors:

Cao, Yu; Chu, Rongming; Li, Zijian Ray

Issue Date:

2022-09-06

Research Org.:

HRL Laboratories, LLC, Malibu, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1925076

Patent Number(s):

11437485

Application Number:

17/131,518

Assignee:

HRL Laboratories, LLC (Malibu, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/28264 - {the insulator being formed after the semiconductor body, the semiconductor being a III-V compound}
H01L29/0649 - {Dielectric regions, e.g. SiO2 regions, air gaps}
H01L29/2003 - {Nitride compounds}
H01L29/41766 - {with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
H01L29/4236 - {within a trench, e.g. trench gate electrode, groove gate electrode}
H01L29/42376 - {characterised by the length or the sectional shape}
H01L29/4238 - {characterised by the surface lay-out}
H01L29/432 - {Heterojunction gate for field effect devices}
H01L29/513 - {the variation being perpendicular to the channel plane}
H01L29/517 - {the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
H01L29/518 - {the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material}
H01L29/7786 - {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}
H01L29/7787 - {with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET}
H01L29/7788 - {Vertical transistors}
H01L29/7813 - {with trench gate electrode, e.g. UMOS transistors
H01L29/7828 - {without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs}

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DOE Contract Number:  

AR0000450

Resource Type:

Patent

Resource Relation:

Patent File Date: 12/22/2020

Country of Publication:

United States

Language:

English