Defense mechanism for non-volatile memory based main memory
Abstract
A method includes receiving a write request for writing incoming data to a target memory line and, in response to the write request, comparing the incoming data with existing data in the target memory line to determine a number of a first type of state transition. The method further includes, in response to determining that the number of the first type of state transition for the write request exceeds a threshold, prior to writing the incoming data to the target memory line, storing adjacent data from each of a set of memory lines adjacent to the target memory line, and after writing the incoming data to the target memory line, writing the stored data to the set of adjacent memory lines.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Advanced Micro Device, Inc., Santa Clara, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1924995
- Patent Number(s):
- 11416323
- Application Number:
- 16/723,855
- Assignee:
- Advanced Micro Devices, Inc. (Santa Clara, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- AC52-07NA27344; B620717
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 12/20/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
SeyedzadehDelcheh, SeyedMohammad, and Raasch, Steven. Defense mechanism for non-volatile memory based main memory. United States: N. p., 2022.
Web.
SeyedzadehDelcheh, SeyedMohammad, & Raasch, Steven. Defense mechanism for non-volatile memory based main memory. United States.
SeyedzadehDelcheh, SeyedMohammad, and Raasch, Steven. Tue .
"Defense mechanism for non-volatile memory based main memory". United States. https://www.osti.gov/servlets/purl/1924995.
@article{osti_1924995,
title = {Defense mechanism for non-volatile memory based main memory},
author = {SeyedzadehDelcheh, SeyedMohammad and Raasch, Steven},
abstractNote = {A method includes receiving a write request for writing incoming data to a target memory line and, in response to the write request, comparing the incoming data with existing data in the target memory line to determine a number of a first type of state transition. The method further includes, in response to determining that the number of the first type of state transition for the write request exceeds a threshold, prior to writing the incoming data to the target memory line, storing adjacent data from each of a set of memory lines adjacent to the target memory line, and after writing the incoming data to the target memory line, writing the stored data to the set of adjacent memory lines.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {8}
}
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