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Title: ZrCoBi based half Heuslers with high thermoelectric conversion efficiency

Abstract

A ZrCoBi-based p-type half-Heusler material can have a formula: ZrCoBi$$_{1-x-y}$$Sn$$_{x}$$Sb$$_{y}$$, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.2. An average dimensionless figure-of-merit (ZT) for the material can be greater than or equal to about 0.80 as calculated by an integration method for temperatures between 300 and 973 K. A ZrCoBi-based n-type half-Heusler material can have a formula: ZrCo$$_{1-x}$$Ni$$_{x}$$Bi$$_{1-y}$$Sb$$_{y}$$, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.3. The material has an average dimensionless figure-of-merit (ZT) is greater than or equal to about 0.65 as calculated by an integration method for temperatures between 300 and 973 K.

Inventors:
;
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1924975
Patent Number(s):
11411154
Application Number:
17/252,659
Assignee:
University of Houston System (Houston, TX)
DOE Contract Number:  
SC0001299
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/26/2019
Country of Publication:
United States
Language:
English

Citation Formats

Ren, Zhifeng, and Zhu, Hangtian. ZrCoBi based half Heuslers with high thermoelectric conversion efficiency. United States: N. p., 2022. Web.
Ren, Zhifeng, & Zhu, Hangtian. ZrCoBi based half Heuslers with high thermoelectric conversion efficiency. United States.
Ren, Zhifeng, and Zhu, Hangtian. Tue . "ZrCoBi based half Heuslers with high thermoelectric conversion efficiency". United States. https://www.osti.gov/servlets/purl/1924975.
@article{osti_1924975,
title = {ZrCoBi based half Heuslers with high thermoelectric conversion efficiency},
author = {Ren, Zhifeng and Zhu, Hangtian},
abstractNote = {A ZrCoBi-based p-type half-Heusler material can have a formula: ZrCoBi$_{1-x-y}$Sn$_{x}$Sb$_{y}$, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.2. An average dimensionless figure-of-merit (ZT) for the material can be greater than or equal to about 0.80 as calculated by an integration method for temperatures between 300 and 973 K. A ZrCoBi-based n-type half-Heusler material can have a formula: ZrCo$_{1-x}$Ni$_{x}$Bi$_{1-y}$Sb$_{y}$, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.3. The material has an average dimensionless figure-of-merit (ZT) is greater than or equal to about 0.65 as calculated by an integration method for temperatures between 300 and 973 K.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {8}
}

Works referenced in this record:

Discovery of ZrCoBi based half Heuslers with high thermoelectric conversion efficiency
journal, June 2018


Method for producing a thermoelectric object for a thermoelectric conversion device
patent-application, October 2014


Thermoelectric Properties of Half-Heusler Bismuthides ZrCo1−x Ni x Bi (x = 0.0 to 0.1)
journal, June 2007


Thermoelectric device and method of manufacturing the same
patent-application, March 2006