ZrCoBi based half Heuslers with high thermoelectric conversion efficiency
Abstract
A ZrCoBi-based p-type half-Heusler material can have a formula: ZrCoBi$$_{1-x-y}$$Sn$$_{x}$$Sb$$_{y}$$, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.2. An average dimensionless figure-of-merit (ZT) for the material can be greater than or equal to about 0.80 as calculated by an integration method for temperatures between 300 and 973 K. A ZrCoBi-based n-type half-Heusler material can have a formula: ZrCo$$_{1-x}$$Ni$$_{x}$$Bi$$_{1-y}$$Sb$$_{y}$$, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.3. The material has an average dimensionless figure-of-merit (ZT) is greater than or equal to about 0.65 as calculated by an integration method for temperatures between 300 and 973 K.
- Inventors:
- Issue Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1924975
- Patent Number(s):
- 11411154
- Application Number:
- 17/252,659
- Assignee:
- University of Houston System (Houston, TX)
- DOE Contract Number:
- SC0001299
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 06/26/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Ren, Zhifeng, and Zhu, Hangtian. ZrCoBi based half Heuslers with high thermoelectric conversion efficiency. United States: N. p., 2022.
Web.
Ren, Zhifeng, & Zhu, Hangtian. ZrCoBi based half Heuslers with high thermoelectric conversion efficiency. United States.
Ren, Zhifeng, and Zhu, Hangtian. Tue .
"ZrCoBi based half Heuslers with high thermoelectric conversion efficiency". United States. https://www.osti.gov/servlets/purl/1924975.
@article{osti_1924975,
title = {ZrCoBi based half Heuslers with high thermoelectric conversion efficiency},
author = {Ren, Zhifeng and Zhu, Hangtian},
abstractNote = {A ZrCoBi-based p-type half-Heusler material can have a formula: ZrCoBi$_{1-x-y}$Sn$_{x}$Sb$_{y}$, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.2. An average dimensionless figure-of-merit (ZT) for the material can be greater than or equal to about 0.80 as calculated by an integration method for temperatures between 300 and 973 K. A ZrCoBi-based n-type half-Heusler material can have a formula: ZrCo$_{1-x}$Ni$_{x}$Bi$_{1-y}$Sb$_{y}$, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.3. The material has an average dimensionless figure-of-merit (ZT) is greater than or equal to about 0.65 as calculated by an integration method for temperatures between 300 and 973 K.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {8}
}
Works referenced in this record:
Understanding the asymmetrical thermoelectric performance for discovering promising thermoelectric materials
journal, June 2019
- Zhu, Hangtian; Mao, Jun; Feng, Zhenzhen
- Science Advances, Vol. 5, Issue 6
Ink for functional layer formation, method for manufacturing light emitting element, light emitting device, and electronic apparatus
patent-application, September 2015
- Watanabe, Shotaro
- US Patent Application 14/663055; 20150270485
Discovery of ZrCoBi based half Heuslers with high thermoelectric conversion efficiency
journal, June 2018
- Zhu, Hangtian; He, Ran; Mao, Jun
- Nature Communications, Vol. 9, Issue 1
Method for producing a thermoelectric object for a thermoelectric conversion device
patent-application, October 2014
- Gerster, Joachim; Bracchi, Alberto; Muller, Michael
- US Patent Application 14/254675; 20140314610
Thermoelectric Properties of Half-Heusler Bismuthides ZrCo1−x Ni x Bi (x = 0.0 to 0.1)
journal, June 2007
- Ponnambalam, V.; Zhang, Bo; Tritt, Terry M.
- Journal of Electronic Materials, Vol. 36, Issue 7
Thermoelectric device and method of manufacturing the same
patent-application, March 2006
- Sogou, Takahiro; Tateyama, Kazuki; Hanada, Hiroyoshi
- US Patent Application 11/206916; 20060042676
Low-oxygen content, crack-free Heusler and Heusler-like alloys & deposition sources & methods of making same
patent-application, July 2008
- Ziani, Abdelouahab
- US Patent Application 12/015666; 20080173543