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Title: Carbon-based volatile and non-volatile memristors

Abstract

An ultrathin, carbon-based memristor with a moiré superlattice potential shows prominent ferroelectric resistance switching. The memristor includes a bilayer material, such as Bernal-stacked bilayer graphene, encapsulated between two layers of a layered material, such as hexagonal boron nitride. At least one of the encapsulating layers is rotationally aligned with the bilayer to create the moiré superlattice potential. The memristor exhibits ultrafast and robust resistance switching between multiple resistance states at high temperatures. The memristor, which may be volatile or nonvolatile, may be suitable for neuromorphic computing.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE; US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1924917
Patent Number(s):
11393976
Application Number:
17/094,141
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
Patent Classifications (CPCs):
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
DOE Contract Number:  
AC02-07CH11358; FA9550-16-1-0382; SC0001819; SC0019300
Resource Type:
Patent
Resource Relation:
Patent File Date: 11/10/2020
Country of Publication:
United States
Language:
English

Citation Formats

Jarillo-Herrero, Pablo, Ma, Qiong, Gedik, Nuh, Xu, Suyang, and Zheng, Zhiren. Carbon-based volatile and non-volatile memristors. United States: N. p., 2022. Web.
Jarillo-Herrero, Pablo, Ma, Qiong, Gedik, Nuh, Xu, Suyang, & Zheng, Zhiren. Carbon-based volatile and non-volatile memristors. United States.
Jarillo-Herrero, Pablo, Ma, Qiong, Gedik, Nuh, Xu, Suyang, and Zheng, Zhiren. Tue . "Carbon-based volatile and non-volatile memristors". United States. https://www.osti.gov/servlets/purl/1924917.
@article{osti_1924917,
title = {Carbon-based volatile and non-volatile memristors},
author = {Jarillo-Herrero, Pablo and Ma, Qiong and Gedik, Nuh and Xu, Suyang and Zheng, Zhiren},
abstractNote = {An ultrathin, carbon-based memristor with a moiré superlattice potential shows prominent ferroelectric resistance switching. The memristor includes a bilayer material, such as Bernal-stacked bilayer graphene, encapsulated between two layers of a layered material, such as hexagonal boron nitride. At least one of the encapsulating layers is rotationally aligned with the bilayer to create the moiré superlattice potential. The memristor exhibits ultrafast and robust resistance switching between multiple resistance states at high temperatures. The memristor, which may be volatile or nonvolatile, may be suitable for neuromorphic computing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {7}
}

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