Methods to deposit and etch controlled thin layers of transition metal dichalcogenides

Mane, Anil U.; Elam, Jeffrey W.

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Title: Methods to deposit and etch controlled thin layers of transition metal dichalcogenides

Abstract

Transition metal dichalcogenides (TMDs) are deposited by atomic layer deposition as thin layers on a substrate. The TMDs may be grown on oxide substrates and may have a tunable TMD-oxide interface. The TMD may be etched using an atomic layer etching technique.

Inventors:: Mane, Anil U.; Elam, Jeffrey W.

Issue Date:: 2022-07-19

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1924916

Patent Number(s):: 11393681

Application Number:: 16/294,797

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02205 - {the layer being characterised by the precursor material for deposition}
H01L21/02255 - {formation by thermal treatment
H01L21/0228 - {deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/0257 - {Doping during depositing}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/3065 - Plasma etching

Show less

DOE Contract Number:: AC02-06CH11357

Resource Type:: Patent

Resource Relation:: Patent File Date: 03/06/2019

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

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                    Mane, Anil U., and Elam, Jeffrey W. Methods to deposit and etch controlled thin layers of transition metal dichalcogenides.  United States: N. p., 2022. 
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                    Mane, Anil U., & Elam, Jeffrey W. Methods to deposit and etch controlled thin layers of transition metal dichalcogenides.  United States.

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                    Mane, Anil U., and Elam, Jeffrey W. Tue .  
        "Methods to deposit and etch controlled thin layers of transition metal dichalcogenides".  United States.  https://www.osti.gov/servlets/purl/1924916.

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@article{osti_1924916,

  title        = {Methods to deposit and etch controlled thin layers of transition metal dichalcogenides},

  author       = {Mane, Anil U. and Elam, Jeffrey W.},

  abstractNote = {Transition metal dichalcogenides (TMDs) are deposited by atomic layer deposition as thin layers on a substrate. The TMDs may be grown on oxide substrates and may have a tunable TMD-oxide interface. The TMD may be etched using an atomic layer etching technique.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2022},

  month        = {7}

}

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