Two-junction photovoltaic devices

Steiner, Myles Aaron; Friedman, Daniel; France, Ryan Joseph; Henry, Asegun

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Title: Two-junction photovoltaic devices

Abstract

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Inventors:: Steiner, Myles Aaron; Friedman, Daniel; France, Ryan Joseph; Henry, Asegun

Issue Date:: 2022-06-21

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1893064

Patent Number(s):: 11367802

Application Number:: 16/269,848

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO); Georgia Tech Research Corporation (Atlanta, GA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H02 - GENERATION H02S - GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0725 - Multiple junction or tandem solar cells
H01L31/0735 - comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L31/1892 - {methods involving the use of temporary, removable substrates}

H - ELECTRICITY H02 - GENERATION H02S - GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
H02S10/30 - Thermophotovoltaic systems

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Resource Relation:: Patent File Date: 02/07/2019

Country of Publication:: United States

Language:: English

Citation Formats


                    Steiner, Myles Aaron, Friedman, Daniel, France, Ryan Joseph, and Henry, Asegun. Two-junction photovoltaic devices.  United States: N. p., 2022. 
        Web.

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                    Steiner, Myles Aaron, Friedman, Daniel, France, Ryan Joseph, & Henry, Asegun. Two-junction photovoltaic devices.  United States.

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                    Steiner, Myles Aaron, Friedman, Daniel, France, Ryan Joseph, and Henry, Asegun. Tue .  
        "Two-junction photovoltaic devices".  United States.  https://www.osti.gov/servlets/purl/1893064.

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@article{osti_1893064,

  title        = {Two-junction photovoltaic devices},

  author       = {Steiner, Myles Aaron and Friedman, Daniel and France, Ryan Joseph and Henry, Asegun},

  abstractNote = {The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2022},

  month        = {6}

}

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Similar Records

Title: Two-junction photovoltaic devices

Abstract

Citation Formats

Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells journal, November 2015

Experimental Demonstration of 28.2% Thermophotovoltaic Conversion Efficiency conference, January 2018

Multi-Junction Solar Cell and Use Thereof patent-application, February 2015

A method of epitaxial growth of a material interface between group III-V materials and silicon wafers providing counterbalancing of residual strains patent-application, December 2017

Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates journal, April 2004

Role of spectral non-idealities in the design of solar thermophotovoltaics journal, January 2014

Thermophotovoltaic system patent, June 1989

Thermophotovoltaic systems patent, April 1996

Thermophotovoltaics: a potential pathway to high efficiency concentrated solar power journal, January 2016

Metamorphic epitaxy for multijunction solar cells journal, March 2016

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells journal, April 2007

Optoelectronical Semiconductor Device patent-application, August 2008

Highly efficient GaAs solar cells by limiting light emission angle journal, January 2013

Investigation of InGaAsP-based solar cells for double-junction photovoltaic devices journal, August 2008

Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells journal, October 2010

Silicon photovoltaic cells in thermophotovoltaic energy conversion conference, January 1978

Four junction inverted metamorphic multijunction solar cell with a single metamorphic layer patent, March 2015

Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1−y buffers by molecular beam epitaxy journal, January 2009

Solar Cell Structures for Improved Current Generation and Collection patent-application, September 2014

Design Flexibility of Ultrahigh Efficiency Four-Junction Inverted Metamorphic Solar Cells journal, March 2016

Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells
journal, November 2015

Experimental Demonstration of 28.2% Thermophotovoltaic Conversion Efficiency
conference, January 2018

Multi-Junction Solar Cell and Use Thereof
patent-application, February 2015

A method of epitaxial growth of a material interface between group III-V materials and silicon wafers providing counterbalancing of residual strains
patent-application, December 2017

Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates
journal, April 2004

Role of spectral non-idealities in the design of solar thermophotovoltaics
journal, January 2014

Thermophotovoltaic system
patent, June 1989

Thermophotovoltaic systems
patent, April 1996

Thermophotovoltaics: a potential pathway to high efficiency concentrated solar power
journal, January 2016

Metamorphic epitaxy for multijunction solar cells
journal, March 2016

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
journal, April 2007

Optoelectronical Semiconductor Device
patent-application, August 2008

Highly efficient GaAs solar cells by limiting light emission angle
journal, January 2013

Investigation of InGaAsP-based solar cells for double-junction photovoltaic devices
journal, August 2008

Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells
journal, October 2010

Silicon photovoltaic cells in thermophotovoltaic energy conversion
conference, January 1978

Four junction inverted metamorphic multijunction solar cell with a single metamorphic layer
patent, March 2015

Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1−y buffers by molecular beam epitaxy
journal, January 2009

Solar Cell Structures for Improved Current Generation and Collection
patent-application, September 2014

Design Flexibility of Ultrahigh Efficiency Four-Junction Inverted Metamorphic Solar Cells
journal, March 2016