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Title: Thin-film target for DT neutron production

Abstract

A novel thin-film target can the life of tritium targets for the production of 14 MeV neutrons by the 3H(2H,n)4He nuclear reaction while using only a small fraction of the amount of tritium compared to a standard thick-film target. With the thin-film target, the incident deuterium is implanted through the front tritide film into the underlying substrate material. A thin permeation barrier layer between the tritide film and substrate reduces the rate of tritium loss from the tritide film. As an example, good thin-film target performance was achieved using W and Fe for the barrier and substrate materials, respectively.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1892977
Patent Number(s):
11343900
Application Number:
16/930,514
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G21 - NUCLEAR PHYSICS G21G - CONVERSION OF CHEMICAL ELEMENTS
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05H - PLASMA TECHNIQUE
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 07/16/2020
Country of Publication:
United States
Language:
English

Citation Formats

Wampler, William R., Doyle, Barney L., and Snow, Clark S. Thin-film target for DT neutron production. United States: N. p., 2022. Web.
Wampler, William R., Doyle, Barney L., & Snow, Clark S. Thin-film target for DT neutron production. United States.
Wampler, William R., Doyle, Barney L., and Snow, Clark S. Tue . "Thin-film target for DT neutron production". United States. https://www.osti.gov/servlets/purl/1892977.
@article{osti_1892977,
title = {Thin-film target for DT neutron production},
author = {Wampler, William R. and Doyle, Barney L. and Snow, Clark S.},
abstractNote = {A novel thin-film target can the life of tritium targets for the production of 14 MeV neutrons by the 3H(2H,n)4He nuclear reaction while using only a small fraction of the amount of tritium compared to a standard thick-film target. With the thin-film target, the incident deuterium is implanted through the front tritide film into the underlying substrate material. A thin permeation barrier layer between the tritide film and substrate reduces the rate of tritium loss from the tritide film. As an example, good thin-film target performance was achieved using W and Fe for the barrier and substrate materials, respectively.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {5}
}

Works referenced in this record:

A long-lived tritiated titanium target for fast neutron production
journal, March 1995


Neutron generator having a target
patent, November 1981