Antiferromagnetic memory storage devices from magnetic transition metal dichalcogenides
Abstract
Switchable antiferromagnetic (AFM) memory devices are provided based on magnetically intercalated transition metal dichalcogenides (TMDs) of the form AxMC2, where A is a magnetic element of stoichiometry x between 0 and 1, M is a transition metal of stoichiometry 1, and C is a chalcogen of stoichiometry 2. Memory storage is achieved by fabricating these materials into crosses of two or more bars and driving DC current pulses along the bars to rotate the AFM order to a fixed angle with respect to the current pulse. Application of current pulses along different bars can switch the AFM order between multiple directions. Standard resistance measurements can detect the orientation of the AFM order as high or low resistance states. The state of the device can be set by the input current pulses, and read-out by the resistance measurement, forming a non-volatile, AFM memory storage bit.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1892969
- Patent Number(s):
- 11342500
- Application Number:
- 16/938,089
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 07/24/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Analytis, James G., Maniv, Eran, Nair, Nityan L., Doyle, Spencer, and John, Caolan. Antiferromagnetic memory storage devices from magnetic transition metal dichalcogenides. United States: N. p., 2022.
Web.
Analytis, James G., Maniv, Eran, Nair, Nityan L., Doyle, Spencer, & John, Caolan. Antiferromagnetic memory storage devices from magnetic transition metal dichalcogenides. United States.
Analytis, James G., Maniv, Eran, Nair, Nityan L., Doyle, Spencer, and John, Caolan. Tue .
"Antiferromagnetic memory storage devices from magnetic transition metal dichalcogenides". United States. https://www.osti.gov/servlets/purl/1892969.
@article{osti_1892969,
title = {Antiferromagnetic memory storage devices from magnetic transition metal dichalcogenides},
author = {Analytis, James G. and Maniv, Eran and Nair, Nityan L. and Doyle, Spencer and John, Caolan},
abstractNote = {Switchable antiferromagnetic (AFM) memory devices are provided based on magnetically intercalated transition metal dichalcogenides (TMDs) of the form AxMC2, where A is a magnetic element of stoichiometry x between 0 and 1, M is a transition metal of stoichiometry 1, and C is a chalcogen of stoichiometry 2. Memory storage is achieved by fabricating these materials into crosses of two or more bars and driving DC current pulses along the bars to rotate the AFM order to a fixed angle with respect to the current pulse. Application of current pulses along different bars can switch the AFM order between multiple directions. Standard resistance measurements can detect the orientation of the AFM order as high or low resistance states. The state of the device can be set by the input current pulses, and read-out by the resistance measurement, forming a non-volatile, AFM memory storage bit.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {5}
}
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