Title: Tunneling full-wave infrared rectenna

Abstract

A rectenna is used for full-wave rectification of infrared radiation to produce electricity. In the rectenna, a metallic grating overlies a semiconductor body. A tunnel barrier is interposed between each grating element and the semiconductor body. Each of the grating elements overlies a bridge pair consisting of a region of n+-doped semiconductor and a region of p+-doped semiconductor, both of which are embedded in more lightly doped host semiconductor material. Each of the two regions that compose the bridge pair forms a rectifying tunnel junction through a tunnel barrier to at least one overlying grating element. Each of the two regions also forms a semiconductor junction with the host semiconductor material.

Inventors:

Davids, Paul; Starbuck, Andrew Lea; Jarecki, Jr., Robert L.; Peters, David W.

Issue Date:

2022-04-05

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:

1892801

Patent Number(s):

11296240

Application Number:

16/702,732

Assignee:

National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/02008 - {for solar cells or solar cell modules}
H01L31/02021 - {for solar cells
H01L31/022425 - {for solar cells}
H01L31/0352 - characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L31/06 - characterised by at least one potential-jump barrier or surface barrier
H01L31/068 - the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/547 - Monocrystalline silicon PV cells

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DOE Contract Number:  

NA0003525

Resource Type:

Patent

Resource Relation:

Patent File Date: 12/04/2019

Country of Publication:

United States

Language:

English