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Title: Tunable and reconfigurable atomically thin heterostructures

Abstract

Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

Inventors:
; ; ; ; ; ; ;
Issue Date:
Research Org.:
Northeastern Univ., Boston, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1892792
Patent Number(s):
11293116
Application Number:
16/326,856
Assignee:
Northwestern University (Boston, MA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
DOE Contract Number:  
AC02-05CH11231; ECCS-1351424; FG02-07ER46352; SC0012575
Resource Type:
Patent
Resource Relation:
Patent File Date: 08/23/2017
Country of Publication:
United States
Language:
English

Citation Formats

Vargas, Anthony, Liu, Fangze, Lane, Christopher Adrian, Rubin, Daniel, Kar, Swastik, Bansil, Arun, Buda, Gianina, and Hennighausen, Zachariah. Tunable and reconfigurable atomically thin heterostructures. United States: N. p., 2022. Web.
Vargas, Anthony, Liu, Fangze, Lane, Christopher Adrian, Rubin, Daniel, Kar, Swastik, Bansil, Arun, Buda, Gianina, & Hennighausen, Zachariah. Tunable and reconfigurable atomically thin heterostructures. United States.
Vargas, Anthony, Liu, Fangze, Lane, Christopher Adrian, Rubin, Daniel, Kar, Swastik, Bansil, Arun, Buda, Gianina, and Hennighausen, Zachariah. Tue . "Tunable and reconfigurable atomically thin heterostructures". United States. https://www.osti.gov/servlets/purl/1892792.
@article{osti_1892792,
title = {Tunable and reconfigurable atomically thin heterostructures},
author = {Vargas, Anthony and Liu, Fangze and Lane, Christopher Adrian and Rubin, Daniel and Kar, Swastik and Bansil, Arun and Buda, Gianina and Hennighausen, Zachariah},
abstractNote = {Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {4}
}

Works referenced in this record:

Layered-material WS 2 /topological insulator Bi 2 Te 3 heterostructure photodetector with ultrahigh responsivity in the range from 370 to 1550 nm
journal, January 2016


Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures
journal, August 2016


Spectroscopic Signatures for Interlayer Coupling in MoS 2 –WSe 2 van der Waals Stacking
journal, August 2014


Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
journal, January 2016