Mid-infrared vertical cavity laser

Jayaraman, Vijaysekhar; Lascola, Kevin; Segal, Stephen; Towner, Fredrick; Cable, Alex

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Title: Mid-infrared vertical cavity laser

Abstract

Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases.

Inventors:: Jayaraman, Vijaysekhar; Lascola, Kevin; Segal, Stephen; Towner, Fredrick; Cable, Alex

Issue Date:: 2022-03-29

Research Org.:: Thorlabs, Inc., Newton, NJ (United States); Praevium Research, Inc., Santa Barbara, CA (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1892777

Patent Number(s):: 11289876

Application Number:: 16/924,969

Assignee:: Thorlabs, Inc. (Newton, NJ); Praevium Research, Inc. (Lompoc, CA)

Patent Classifications (CPCs):: G - PHYSICS G01 - MEASURING G01J - MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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G - PHYSICS G01 - MEASURING G01J - MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT
G01J2003/423 - {Spectral arrangements using lasers, e.g. tunable}
G01J3/42 - Absorption spectrometry

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/041 - {Optical pumping}
H01S5/18358 - {containing spacer layers to adjust the phase of the light wave in the cavity}
H01S5/18361 - {Structure of the reflectors, e.g. hybrid mirrors}
H01S5/18366 - {Membrane DBR, i.e. a movable DBR on top of the VCSEL}
H01S5/18377 - {comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers}
H01S5/1838 - {Reflector bonded by wafer fusion or by an intermediate compound}
H01S5/18383 - {with periodic active regions at nodes or maxima of light intensity}
H01S5/3218 - {specially strained cladding layers, other than for strain compensation}
H01S5/3403 - {having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation}
H01S5/34306 - {emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers}
H01S5/34366 - {based on InGa

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DOE Contract Number:: AR0000538

Resource Type:: Patent

Resource Relation:: Patent File Date: 07/09/2020

Country of Publication:: United States

Language:: English

Citation Formats


                    Jayaraman, Vijaysekhar, Lascola, Kevin, Segal, Stephen, Towner, Fredrick, and Cable, Alex. Mid-infrared vertical cavity laser.  United States: N. p., 2022. 
        Web.

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                    Jayaraman, Vijaysekhar, Lascola, Kevin, Segal, Stephen, Towner, Fredrick, & Cable, Alex. Mid-infrared vertical cavity laser.  United States.

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                    Jayaraman, Vijaysekhar, Lascola, Kevin, Segal, Stephen, Towner, Fredrick, and Cable, Alex. Tue .  
        "Mid-infrared vertical cavity laser".  United States.  https://www.osti.gov/servlets/purl/1892777.

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@article{osti_1892777,

  title        = {Mid-infrared vertical cavity laser},

  author       = {Jayaraman, Vijaysekhar and Lascola, Kevin and Segal, Stephen and Towner, Fredrick and Cable, Alex},

  abstractNote = {Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2022},

  month        = {3}

}

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Works referenced in this record:

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Similar Records

Title: Mid-infrared vertical cavity laser

Abstract

Citation Formats

Room-temperature vertical-cavity surface-emitting lasers at 4 μ m with GaSb-based type-II quantum wells journal, February 2017

Type II Quantum Well Mid-Infrared Optoelectronic Devices patent-application, August 2005

GaSb-Based Semiconductor Disk Laser With 130-nm Tuning Range at 2.5 $\mu$m journal, June 2011

Interband cascade devices patent, May 2019

High-performance near- and mid-infrared crystalline coatings journal, June 2016

Laser scanning microscope and method for correcting imaging errors particularly in high-resolution scanning microscopy patent-application, March 2015

The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review journal, January 2004

Scanning microscope patent-application, April 2014

Optically Pumped Semiconductor Disk Laser patent-application, September 2015

Continuous-wave room-temperature operation of a 28 μm GaSb-based semiconductor disk laser journal, January 2011

Band parameters for III–V compound semiconductors and their alloys journal, June 2001

Multiple-photon excitation light sheet illumination microscope patent-application, May 2011

Method and Device for Dynamically Shifting a Light Beam With Regard to an Optic Focusing the Light Beam patent-application, October 2011

Type-I Diode Lasers for Spectral Region Above 3 μm journal, September 2011

Room-temperature mid-infrared interband cascade vertical-cavity surface-emitting lasers journal, October 2016

Interband cascade lasers with engineered carrier densities patent, June 2015

Large field of view, high resolution microscope patent, May 2019

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Room-temperature vertical-cavity surface-emitting lasers at 4 μ m with GaSb-based type-II quantum wells
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Type II Quantum Well Mid-Infrared Optoelectronic Devices
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GaSb-Based Semiconductor Disk Laser With 130-nm Tuning Range at 2.5 $\mu$m
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Interband cascade devices
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High-performance near- and mid-infrared crystalline coatings
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Laser scanning microscope and method for correcting imaging errors particularly in high-resolution scanning microscopy
patent-application, March 2015

The $6.1 A ̊$ family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004

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Continuous-wave room-temperature operation of a 28 μm GaSb-based semiconductor disk laser
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Band parameters for III–V compound semiconductors and their alloys
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