Ballistic reversible superconducting memory element
Abstract
A reversible memory element is provided. The reversible memory element comprises a reversible memory cell comprising a Josephson junction and a passive inductor. A ballistic interconnect is connected to the reversible memory cell by a bidirectional input/output port. A polarized input fluxon propagating along the ballistic interconnect exchanges polarity with a stationary stored fluxon in the reversible memory cell in response to the input fluxon reflecting off the reversible memory cell.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1892769
- Patent Number(s):
- 11289156
- Application Number:
- 16/943,613
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 07/30/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Frank, Michael P., and Debenedictis, Erik. Ballistic reversible superconducting memory element. United States: N. p., 2022.
Web.
Frank, Michael P., & Debenedictis, Erik. Ballistic reversible superconducting memory element. United States.
Frank, Michael P., and Debenedictis, Erik. Tue .
"Ballistic reversible superconducting memory element". United States. https://www.osti.gov/servlets/purl/1892769.
@article{osti_1892769,
title = {Ballistic reversible superconducting memory element},
author = {Frank, Michael P. and Debenedictis, Erik},
abstractNote = {A reversible memory element is provided. The reversible memory element comprises a reversible memory cell comprising a Josephson junction and a passive inductor. A ballistic interconnect is connected to the reversible memory cell by a bidirectional input/output port. A polarized input fluxon propagating along the ballistic interconnect exchanges polarity with a stationary stored fluxon in the reversible memory cell in response to the input fluxon reflecting off the reversible memory cell.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {3}
}
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