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Title: Radiation detector using a graphene amplifier layer

Abstract

A radiation field is detected or imaged using one or more junction devices in which a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In the junction devices, pixel-level amplification and read-out are accomplished through the photogating of the devices by absorption within the absorber layer while it is in a state of deep depletion. When the two-dimensional conductor is graphene, we refer to a device operating in that manner as a deeply depleted graphene-oxide-semiconductor (D2GOS) detector.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1892763
Patent Number(s):
11287536
Application Number:
16/162,756
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 10/17/2018
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Howell, Stephen W., Peters, David W., Beechem, III, Thomas Edwin, Ruiz, Isaac, Harrison, Richard Karl, and Martin, Jeffrey B. Radiation detector using a graphene amplifier layer. United States: N. p., 2022. Web.
Howell, Stephen W., Peters, David W., Beechem, III, Thomas Edwin, Ruiz, Isaac, Harrison, Richard Karl, & Martin, Jeffrey B. Radiation detector using a graphene amplifier layer. United States.
Howell, Stephen W., Peters, David W., Beechem, III, Thomas Edwin, Ruiz, Isaac, Harrison, Richard Karl, and Martin, Jeffrey B. Tue . "Radiation detector using a graphene amplifier layer". United States. https://www.osti.gov/servlets/purl/1892763.
@article{osti_1892763,
title = {Radiation detector using a graphene amplifier layer},
author = {Howell, Stephen W. and Peters, David W. and Beechem, III, Thomas Edwin and Ruiz, Isaac and Harrison, Richard Karl and Martin, Jeffrey B.},
abstractNote = {A radiation field is detected or imaged using one or more junction devices in which a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In the junction devices, pixel-level amplification and read-out are accomplished through the photogating of the devices by absorption within the absorber layer while it is in a state of deep depletion. When the two-dimensional conductor is graphene, we refer to a device operating in that manner as a deeply depleted graphene-oxide-semiconductor (D2GOS) detector.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {3}
}

Works referenced in this record:

Graphene-Insulator-Semiconductor Junction for Hybrid Photodetection Modalities
journal, November 2017


Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
journal, February 2009


Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides
journal, October 2009


Quantum Dot Sensor Readout
patent-application, February 2018


Tunable infrared plasmonic devices using graphene/insulator stacks
journal, April 2012


Sub-wavelength antenna enhanced bilayer graphene tunable photodetector
patent, March 2016


Detection of ionizing radiation using graphene field effect transistors
conference, October 2009

  • Foxe, M.; Lopez, G.; Childres, I.
  • 2009 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2009), 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC)
  • https://doi.org/10.1109/NSSMIC.2009.5401864

Van der Waals heterostructures
journal, July 2013


A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate
journal, August 2014


Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates
journal, September 2015


High Performance Graphene Transistors and Fabrication Processes Thereof
patent-application, March 2014


Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection
journal, May 2012


Effective mobility of single-layer graphene transistors as a function of channel dimensions
journal, May 2011


Metal-Insulator-Semiconductor Photodetectors
journal, September 2010