Title: Molecular layer etching

Abstract

A method of etching an organic or hybrid inorganic/organic material. The method etches molecular layer deposition coatings. An etching cycle comprises a first half reaction exposing the coating to a precursor. A second half reaction exposes a second precursor, removing or etching a portion of the coating.

Inventors:

Young, Matthias John; Letourneau, Stephen Payonk; Choudhury, Devika; Elam, Jeffrey W.; Yanguas-Gil, Angel; Mane, Anil U.

Issue Date:

2022-02-22

Research Org.:

Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1892646

Patent Number(s):

11257682

Application Number:

16/588,176

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02178 - {the material containing aluminium, e.g. Al2O3}
H01L21/02205 - {the layer being characterised by the precursor material for deposition}
H01L21/0228 - {deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD}
H01L21/0272 - {for lift-off processes}
H01L21/0331 - {for lift-off processes}
H01L21/0332 - {characterised by their composition, e.g. multilayer masks, materials}
H01L21/31116 - {by dry-etching}
H01L21/31122 - {of layers not containing Si, e.g. PZT, Al2O3}
H01L21/31138 - {by dry-etching}

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DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 09/30/2019

Country of Publication:

United States

Language:

English