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Title: Removal of field and embedded metal by spin spray etching

Abstract

A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment. 6 figs.

Inventors:
; ;
Issue Date:
Research Org.:
University of California
OSTI Identifier:
187084
Patent Number(s):
5,486,234
Application Number:
PAN: 8-375,054
Assignee:
Dept. of Energy, Washington, DC (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 23 Jan 1996
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ELECTRONIC CIRCUITS; FABRICATION; COPPER; REMOVAL; ETCHING; DIELECTRIC MATERIALS; SEMICONDUCTOR MATERIALS

Citation Formats

Contolini, R J, Mayer, S T, and Tarte, L A. Removal of field and embedded metal by spin spray etching. United States: N. p., 1996. Web.
Contolini, R J, Mayer, S T, & Tarte, L A. Removal of field and embedded metal by spin spray etching. United States.
Contolini, R J, Mayer, S T, and Tarte, L A. Tue . "Removal of field and embedded metal by spin spray etching". United States.
@article{osti_187084,
title = {Removal of field and embedded metal by spin spray etching},
author = {Contolini, R J and Mayer, S T and Tarte, L A},
abstractNote = {A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}