Removal of field and embedded metal by spin spray etching
Abstract
A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment. 6 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- OSTI Identifier:
- 187084
- Patent Number(s):
- 5486234
- Application Number:
- PAN: 8-375,054
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 23 Jan 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ELECTRONIC CIRCUITS; FABRICATION; COPPER; REMOVAL; ETCHING; DIELECTRIC MATERIALS; SEMICONDUCTOR MATERIALS
Citation Formats
Contolini, R J, Mayer, S T, and Tarte, L A. Removal of field and embedded metal by spin spray etching. United States: N. p., 1996.
Web.
Contolini, R J, Mayer, S T, & Tarte, L A. Removal of field and embedded metal by spin spray etching. United States.
Contolini, R J, Mayer, S T, and Tarte, L A. Tue .
"Removal of field and embedded metal by spin spray etching". United States.
@article{osti_187084,
title = {Removal of field and embedded metal by spin spray etching},
author = {Contolini, R J and Mayer, S T and Tarte, L A},
abstractNote = {A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}