Process for producing large grain cadmium telluride
Abstract
A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.
- Inventors:
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 187066
- Patent Number(s):
- 5484736
- Application Number:
- PAN: 8-308,362
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 16 Jan 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; CADMIUM TELLURIDES; ENERGY BEAM DEPOSITION; GRAIN GROWTH; CADMIUM TELLURIDE SOLAR CELLS; FABRICATION; ENERGY BEAM DEPOSITION FILMS; STOICHIOMETRY; HEAT TREATMENTS
Citation Formats
Hasoon, F S, and Nelson, A J. Process for producing large grain cadmium telluride. United States: N. p., 1996.
Web.
Hasoon, F S, & Nelson, A J. Process for producing large grain cadmium telluride. United States.
Hasoon, F S, and Nelson, A J. Tue .
"Process for producing large grain cadmium telluride". United States.
@article{osti_187066,
title = {Process for producing large grain cadmium telluride},
author = {Hasoon, F S and Nelson, A J},
abstractNote = {A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}