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Title: Process for producing large grain cadmium telluride

A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.
Inventors:
;
Issue Date:
OSTI Identifier:
187066
Assignee:
Midwest Research Inst., Kansas City, MO (United States) PTO; SCA: 360601; 360602; 140501; PA: EDB-96:037634; SN: 96001532319
Patent Number(s):
US 5,484,736/A/
Application Number:
PAN: 8-308,362
Contract Number:
AC36-83CH10093
Resource Relation:
Other Information: PBD: 16 Jan 1996
Research Org:
Midwest Research Institute
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; CADMIUM TELLURIDES; ENERGY BEAM DEPOSITION; GRAIN GROWTH; CADMIUM TELLURIDE SOLAR CELLS; FABRICATION; ENERGY BEAM DEPOSITION FILMS; STOICHIOMETRY; HEAT TREATMENTS