Method for gas bubble and void control and removal from metals
Abstract
A method is described for enhancing the diffusion of gas bubbles or voids attached to impurity precipitates, and biasing their direction of migration out of the host metal (or metal alloy) by applying a temperature gradient across the host metal (or metal alloy). In the preferred embodiment of the present invention, the impurity metal is insoluble in the host metal and has a melting point lower than the melting point of the host material. Also, preferably the impurity metal is lead or indium and the host metal is aluminum or a metal alloy. 2 figs.
- Inventors:
- Issue Date:
- Research Org.:
- EG & G Idaho Inc
- OSTI Identifier:
- 187056
- Patent Number(s):
- 5490187
- Application Number:
- PAN: 8-259,201
- Assignee:
- Lockheed Idaho Technologies Co., Idaho Falls, ID (United States)
- DOE Contract Number:
- AC07-76ID01570
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 6 Feb 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; METALS; HEAT TREATMENTS; REFINING; ALLOYS; LEAD; REMOVAL; INDIUM; ALUMINIUM; INCLUSIONS; IMPURITIES; DIFFUSION; MELTING POINTS
Citation Formats
Siclen, C.D. Van, and Wright, R N. Method for gas bubble and void control and removal from metals. United States: N. p., 1996.
Web.
Siclen, C.D. Van, & Wright, R N. Method for gas bubble and void control and removal from metals. United States.
Siclen, C.D. Van, and Wright, R N. Tue .
"Method for gas bubble and void control and removal from metals". United States.
@article{osti_187056,
title = {Method for gas bubble and void control and removal from metals},
author = {Siclen, C.D. Van and Wright, R N},
abstractNote = {A method is described for enhancing the diffusion of gas bubbles or voids attached to impurity precipitates, and biasing their direction of migration out of the host metal (or metal alloy) by applying a temperature gradient across the host metal (or metal alloy). In the preferred embodiment of the present invention, the impurity metal is insoluble in the host metal and has a melting point lower than the melting point of the host material. Also, preferably the impurity metal is lead or indium and the host metal is aluminum or a metal alloy. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 06 00:00:00 EST 1996},
month = {Tue Feb 06 00:00:00 EST 1996}
}
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