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Title: Method for gas bubble and void control and removal from metals

Abstract

A method is described for enhancing the diffusion of gas bubbles or voids attached to impurity precipitates, and biasing their direction of migration out of the host metal (or metal alloy) by applying a temperature gradient across the host metal (or metal alloy). In the preferred embodiment of the present invention, the impurity metal is insoluble in the host metal and has a melting point lower than the melting point of the host material. Also, preferably the impurity metal is lead or indium and the host metal is aluminum or a metal alloy. 2 figs.

Inventors:
;
Issue Date:
Research Org.:
EG & G Idaho Inc
OSTI Identifier:
187056
Patent Number(s):
5,490,187
Application Number:
PAN: 8-259,201
Assignee:
Lockheed Idaho Technologies Co., Idaho Falls, ID (United States)
DOE Contract Number:  
AC07-76ID01570
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 6 Feb 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; METALS; HEAT TREATMENTS; REFINING; ALLOYS; LEAD; REMOVAL; INDIUM; ALUMINIUM; INCLUSIONS; IMPURITIES; DIFFUSION; MELTING POINTS

Citation Formats

Siclen, C.D. Van, and Wright, R N. Method for gas bubble and void control and removal from metals. United States: N. p., 1996. Web.
Siclen, C.D. Van, & Wright, R N. Method for gas bubble and void control and removal from metals. United States.
Siclen, C.D. Van, and Wright, R N. Tue . "Method for gas bubble and void control and removal from metals". United States.
@article{osti_187056,
title = {Method for gas bubble and void control and removal from metals},
author = {Siclen, C.D. Van and Wright, R N},
abstractNote = {A method is described for enhancing the diffusion of gas bubbles or voids attached to impurity precipitates, and biasing their direction of migration out of the host metal (or metal alloy) by applying a temperature gradient across the host metal (or metal alloy). In the preferred embodiment of the present invention, the impurity metal is insoluble in the host metal and has a melting point lower than the melting point of the host material. Also, preferably the impurity metal is lead or indium and the host metal is aluminum or a metal alloy. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {2}
}