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Title: Preparation of metal chalcogenides

Abstract

A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.

Inventors:
; ;
Issue Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1860200
Patent Number(s):
11208334
Application Number:
15/998,266
Assignee:
Iowa State University Research Foundation, Inc. (Ames, IA)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B02 - CRUSHING, PULVERISING, OR DISINTEGRATING B02C - CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
DOE Contract Number:  
AC02-07CH11358
Resource Type:
Patent
Resource Relation:
Patent File Date: 07/26/2018
Country of Publication:
United States
Language:
English

Citation Formats

Balema, Viktor, Hlova, Ihor, and Pecharsky, Vitalij K. Preparation of metal chalcogenides. United States: N. p., 2021. Web.
Balema, Viktor, Hlova, Ihor, & Pecharsky, Vitalij K. Preparation of metal chalcogenides. United States.
Balema, Viktor, Hlova, Ihor, and Pecharsky, Vitalij K. Tue . "Preparation of metal chalcogenides". United States. https://www.osti.gov/servlets/purl/1860200.
@article{osti_1860200,
title = {Preparation of metal chalcogenides},
author = {Balema, Viktor and Hlova, Ihor and Pecharsky, Vitalij K.},
abstractNote = {A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {12}
}

Works referenced in this record:

Mo x W 1− x S 2 Solid Solutions as 3D Electrodes for Hydrogen Evolution Reaction
journal, April 2015


Lateral Built-In Potential of Monolayer MoS 2 -WS 2 In-Plane Heterostructures by a Shortcut Growth Strategy
journal, September 2015


Two Cation Disulfide Layers in the WxMo(1−x)S2 Lamellar Solid Solution
journal, August 2001


High quantity and quality few-layers transition metal disulfide nanosheets from wet-milling exfoliation
journal, January 2013


Gas Protection of Two-Dimensional Nanomaterials from High-Energy Impacts
journal, October 2016


Monolayers of W x Mo 1−x S 2 alloy heterostructure with in-plane composition variations
journal, February 2015


Bottom-up direct writing approach for controlled fabrication of WS 2 /MoS 2 heterostructure systems
journal, January 2016


Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure
journal, May 2016


Raman study of 2H-Mo1−xWxS2 layered mixed crystals
journal, September 2010