Title: Solid-state neutron detector

Abstract

A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-¹⁰BN or h-BN or ¹⁰BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-¹⁰BN or h-BN or ¹⁰BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

Inventors:

Jiang, Hongxing; Lin, Jingyu; Li, Jing; Maity, Avisek; Grenadier, Sam

Issue Date:

2021-12-07

Research Org.:

Texas Tech University, Lubbock, TX, (United States)

Sponsoring Org.:

USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:

1860149

Patent Number(s):

11195968

Application Number:

16/897,742

Assignee:

Texas Tech University System (Lubbock, TX)

Patent Classifications (CPCs):

G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION

G01T3/08 - with semiconductor detectors

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/02019 - {for devices characterised by at least one potential jump barrier or surface barrier}
H01L31/0224 - Electrodes
H01L31/022408 - {for devices characterised by at least one potential jump barrier or surface barrier}
H01L31/03044 - {comprising a nitride compounds, e.g. GaN}
H01L31/036 - characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
H01L31/1856 - {comprising nitride compounds, e.g. GaN}
H01L31/1892 - {methods involving the use of temporary, removable substrates}

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DOE Contract Number:  

AR0000964

Resource Type:

Patent

Resource Relation:

Patent File Date: 06/10/2020

Country of Publication:

United States

Language:

English