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Title: Steep slope transistors with threshold switching devices

Abstract

A steep-slope (SS) field effect transistor (FET) including a FET having a source region and a drain region, and a threshold switching device in direct contact with the source region or the drain region of the FET. Fabricating the steep-slope (SS) field effect transistor (FET) includes fabricating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) having a source region and a drain region, depositing a first electrode layer directly on the source region or the drain region, depositing a threshold switching layer directly on the first electrode layer, and depositing a second electrode layer directly on the threshold switching layer.

Inventors:
; ; ;
Issue Date:
Research Org.:
Arizona State Univ., Scottsdale, AZ (United States)
Sponsoring Org.:
USDOE; National Aeronautics and Space Administration (NASA)
OSTI Identifier:
1860130
Patent Number(s):
11189717
Application Number:
16/739,333
Assignee:
Arizona Board of Regents on Behalf of the Arizona State University (Scottsdale, AZ)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
80NSSC 17K0768; AR0000868
Resource Type:
Patent
Resource Relation:
Patent File Date: 01/10/2020
Country of Publication:
United States
Language:
English

Citation Formats

Huang, Xuanqi, Zhao, Yuji, Fang, Runchen, and Barnaby, Hugh James. Steep slope transistors with threshold switching devices. United States: N. p., 2021. Web.
Huang, Xuanqi, Zhao, Yuji, Fang, Runchen, & Barnaby, Hugh James. Steep slope transistors with threshold switching devices. United States.
Huang, Xuanqi, Zhao, Yuji, Fang, Runchen, and Barnaby, Hugh James. Tue . "Steep slope transistors with threshold switching devices". United States. https://www.osti.gov/servlets/purl/1860130.
@article{osti_1860130,
title = {Steep slope transistors with threshold switching devices},
author = {Huang, Xuanqi and Zhao, Yuji and Fang, Runchen and Barnaby, Hugh James},
abstractNote = {A steep-slope (SS) field effect transistor (FET) including a FET having a source region and a drain region, and a threshold switching device in direct contact with the source region or the drain region of the FET. Fabricating the steep-slope (SS) field effect transistor (FET) includes fabricating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) having a source region and a drain region, depositing a first electrode layer directly on the source region or the drain region, depositing a threshold switching layer directly on the first electrode layer, and depositing a second electrode layer directly on the threshold switching layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {11}
}

Works referenced in this record:

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers
journal, October 2017


Threshold Switching Device
patent-application, December 2018


Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$
journal, March 2018


A steep-slope transistor based on abrupt electronic phase transition
journal, August 2015


Monolithic integration of AgTe/TiO2 based threshold switching device with TiN liner for steep slope field-effect transistors
conference, December 2016


Single-layer MoS2 transistors
journal, January 2011


Threshold Switching Contact in a Field-Effect Transistor as a Selector
patent-application, October 2019


3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology
journal, October 2017


GaN-Based Threshold Switching Device and Memory Diode
patent-application, May 2020


SiO2 based conductive bridging random access memory
journal, March 2017


Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well
journal, January 2017


Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency
journal, April 2017


Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition
journal, December 2018


Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m -plane GaN substrates
journal, October 2018


Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO 2 Switching Layer
journal, May 2016


Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
journal, May 2016


Steep-Switch Field Effect Transistor with Integrated Bi-Stable Resistive System
patent-application, August 2019


A Graphene-Based Filament Transistor with Sub-10 mVdec −1 Subthreshold Swing
journal, March 2018


Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications
journal, January 2017


Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si 3 N 4 as Gate Dielectric and Passivation Layer
journal, February 2016


Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO 2
journal, March 2018


Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes
journal, June 2017


Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si
journal, June 2018


Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations
journal, May 2017


Redox processes in silicon dioxide thin films using copper microelectrodes
journal, November 2011


Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?
journal, June 2018


Integrated GaN photonic circuits on silicon (100) for second harmonic generation
journal, January 2011


Limits on Silicon Nanoelectronics for Terascale Integration
journal, September 2001


Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts
journal, June 2018


Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
journal, July 2015


Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
journal, January 2018


A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration
conference, December 2012


A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells
journal, December 2015


Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
journal, February 2006


A CMOS-compatible electronic synapse device based on Cu/SiO 2 /W programmable metallization cells
journal, May 2016


High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination
journal, July 2018


Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
journal, February 2008


Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers
journal, July 2018


Electrochemical metallization memories—fundamentals, applications, prospects
journal, June 2011


Nanometre-scale electronics with III–V compound semiconductors
journal, November 2011