Title: Steep slope transistors with threshold switching devices

Abstract

A steep-slope (SS) field effect transistor (FET) including a FET having a source region and a drain region, and a threshold switching device in direct contact with the source region or the drain region of the FET. Fabricating the steep-slope (SS) field effect transistor (FET) includes fabricating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) having a source region and a drain region, depositing a first electrode layer directly on the source region or the drain region, depositing a threshold switching layer directly on the first electrode layer, and depositing a second electrode layer directly on the threshold switching layer.

Inventors:

Huang, Xuanqi; Zhao, Yuji; Fang, Runchen; Barnaby, Hugh James

Issue Date:

Tue Nov 30 00:00:00 EST 2021

Research Org.:

Arizona State Univ., Scottsdale, AZ (United States)

Sponsoring Org.:

USDOE; National Aeronautics and Space Administration (NASA)

OSTI Identifier:

1860130

Patent Number(s):

11189717

Application Number:

16/739,333

Assignee:

Arizona Board of Regents on Behalf of the Arizona State University (Scottsdale, AZ)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/0847 - {of field-effect transistors with insulated gate
H01L29/2003 - {Nitride compounds}
H01L29/205 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/518 - {the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material}
H01L29/66462 - {with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT}
H01L29/7786 - {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}
H01L29/7787 - {with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET}

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DOE Contract Number:  

80NSSC 17K0768; AR0000868

Resource Type:

Patent

Resource Relation:

Patent File Date: 01/10/2020

Country of Publication:

United States

Language:

English