Title: Superlattice structure including two-dimensional material and device including the superlattice structure

Abstract

Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.

Inventors:

Lee, Minhyun; Park, Jiwoong; Xie, Saien; Heo, Jinseong; Shin, Hyeonjin

Issue Date:

Tue Nov 30 00:00:00 EST 2021

Research Org.:

Samsung Electronics Co., Ltd., Gyeonggi (South Korea); Cornell Univ., Ithaca, NY (United States); Univ. of Chicago, IL (United States)

Sponsoring Org.:

USDOE; US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)

OSTI Identifier:

1860129

Patent Number(s):

11189699

Application Number:

16/428,006

Assignee:

Samsung Electronics Co., Ltd. (Gyeonggi-do, KR); Center for Technology Licensing at Cornell University (Ithaca, NY); The University of Chicago (Chicago, IL)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02485 - {Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02507 - {Alternating layers, e.g. superlattice}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/823807 - {with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials}
H01L21/8254 - the substrate being a semiconductor, using II-VI technology
H01L27/092 - complementary MIS field-effect transistors
H01L29/1054 - {with a variation of the composition, e.g. channel with strained layer for increasing the mobility}
H01L29/158 - {Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]}
H01L29/24 - including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L29/66969 - {of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
H01L29/778 - with two-dimensional charge carrier gas channel, e.g. HEMT {
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy

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DOE Contract Number:  

1420709; 1539918; FAA9550-16-0347

Resource Type:

Patent

Resource Relation:

Patent File Date: 05/31/2019

Country of Publication:

United States

Language:

English