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Title: Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching

Abstract

A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Univ. of New Mexico, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1860076
Patent Number(s):
11177126
Application Number:
16/684,313
Assignee:
STC.UNM (Albuqueque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AR0000869
Resource Type:
Patent
Resource Relation:
Patent File Date: 11/14/2019
Country of Publication:
United States
Language:
English

Citation Formats

Monavarian, Morteza, Feezell, Daniel F., Aragon, Andrew, Mishkat-Ul-Masabih, Saadat, Allerman, Andrew A., Armstrong, Andrew, and Crawford, Mary H. Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching. United States: N. p., 2021. Web.
Monavarian, Morteza, Feezell, Daniel F., Aragon, Andrew, Mishkat-Ul-Masabih, Saadat, Allerman, Andrew A., Armstrong, Andrew, & Crawford, Mary H. Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching. United States.
Monavarian, Morteza, Feezell, Daniel F., Aragon, Andrew, Mishkat-Ul-Masabih, Saadat, Allerman, Andrew A., Armstrong, Andrew, and Crawford, Mary H. Tue . "Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching". United States. https://www.osti.gov/servlets/purl/1860076.
@article{osti_1860076,
title = {Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching},
author = {Monavarian, Morteza and Feezell, Daniel F. and Aragon, Andrew and Mishkat-Ul-Masabih, Saadat and Allerman, Andrew A. and Armstrong, Andrew and Crawford, Mary H.},
abstractNote = {A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {11}
}

Works referenced in this record:

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