Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others

Mane, Anil U.; Choudhury, Devika; Elam, Jeffrey W.; Letourneau, Steven Payonk

Advanced Search OptionsAdvanced Search queries use a traditional Term Search. For more info, see our FAQ.

All Fields:

Patent Title:

Abstract:

Assignee:

Inventor(s):

Patent Number:

Patent Classification (CPC):

All Classifications
A - human necessities
A01 - agriculture
A21 - baking
A22 - butchering
A23 - foods or foodstuffs
A24 - tobacco
A41 - wearing apparel
A42 - headwear
A43 - footwear
A44 - haberdashery
A45 - hand or travelling articles
A46 - brushware
A47 - furniture
A61 - medical or veterinary science
A62 - life-saving
A63 - sports
A99 - subject matter not otherwise provided for in this section
B - performing operations
B01 - physical or chemical processes or apparatus in general
B02 - crushing, pulverising, or disintegrating
B03 - separation of solid materials using liquids or using pneumatic tables or jigs
B04 - centrifugal apparatus or machines for carrying-out physical or chemical processes
B05 - spraying or atomising in general
B06 - generating or transmitting mechanical vibrations in general
B07 - separating solids from solids
B08 - cleaning
B09 - disposal of solid waste
B21 - mechanical metal-working without essentially removing material
B22 - casting
B23 - machine tools
B24 - grinding
B25 - hand tools
B26 - hand cutting tools
B27 - working or preserving wood or similar material
B28 - working cement, clay, or stone
B29 - working of plastics
B30 - presses
B31 - making articles of paper, cardboard or material worked in a manner analogous to paper
B32 - layered products
B33 - additive manufacturing technology
B41 - printing
B42 - bookbinding
B43 - writing or drawing implements
B44 - decorative arts
B60 - vehicles in general
B61 - railways
B62 - land vehicles for travelling otherwise than on rails
B63 - ships or other waterborne vessels
B64 - aircraft
B65 - conveying
B66 - hoisting
B67 - opening, closing {or cleaning} bottles, jars or similar containers
B68 - saddlery
B81 - microstructural technology
B82 - nanotechnology
B99 - subject matter not otherwise provided for in this section
C - chemistry
C01 - inorganic chemistry
C02 - treatment of water, waste water, sewage, or sludge
C03 - glass
C04 - cements
C05 - fertilisers
C06 - explosives
C07 - organic chemistry
C08 - organic macromolecular compounds
C09 - dyes
C10 - petroleum, gas or coke industries
C11 - animal or vegetable oils, fats, fatty substances or waxes
C12 - biochemistry
C13 - sugar industry
C14 - skins
C21 - metallurgy of iron
C22 - metallurgy
C23 - coating metallic material
C25 - electrolytic or electrophoretic processes
C30 - crystal growth
C40 - combinatorial technology
C99 - subject matter not otherwise provided for in this section
D - textiles
D01 - natural or man-made threads or fibres
D02 - yarns
D03 - weaving
D04 - braiding
D05 - sewing
D06 - treatment of textiles or the like
D07 - ropes
D10 - indexing scheme associated with sublasses of section d, relating to textiles
D21 - paper-making
D99 - subject matter not otherwise provided for in this section
E - fixed constructions
E01 - construction of roads, railways, or bridges
E02 - hydraulic engineering
E03 - water supply
E04 - building
E05 - locks
E06 - doors, windows, shutters, or roller blinds in general
E21 - earth drilling
E99 - subject matter not otherwise provided for in this section
F - mechanical engineering
F01 - machines or engines in general
F02 - combustion engines
F03 - machines or engines for liquids
F04 - positive - displacement machines for liquids
F05 - indexing schemes relating to engines or pumps in various subclasses of classes f01-f04
F15 - fluid-pressure actuators
F16 - engineering elements and units
F17 - storing or distributing gases or liquids
F21 - lighting
F22 - steam generation
F23 - combustion apparatus
F24 - heating
F25 - refrigeration or cooling
F26 - drying
F27 - furnaces
F28 - heat exchange in general
F41 - weapons
F42 - ammunition
F99 - subject matter not otherwise provided for in this section
G - physics
G01 - measuring
G02 - optics
G03 - photography
G04 - horology
G05 - controlling
G06 - computing
G07 - checking-devices
G08 - signalling
G09 - education
G10 - musical instruments
G11 - information storage
G12 - instrument details
G16 - information and communication technology [ict] specially adapted for specific application fields
G21 - nuclear physics
G99 - subject matter not otherwise provided for in this section
H - electricity
H01 - basic electric elements
H02 - generation
H03 - basic electronic circuitry
H04 - electric communication technique
H05 - electric techniques not otherwise provided for
H99 - subject matter not otherwise provided for in this section
Y - new / cross sectional technologies
Y02 - technologies or applications for mitigation or adaptation against climate change
Y04 - information or communication technologies having an impact on other technology areas
Y10 - technical subjects covered by former uspc

More Options ...

Title: Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others

Abstract

An ultra-thin film transition metal dichalcogenide (“TMD”) supported on a support. The TMD is formed from a metal grown by atomic layer deposition (“ALD”) on a substrate. The metal is sulphurized to produce a TMD ultra-thin layer.

Inventors:: Mane, Anil U.; Choudhury, Devika; Elam, Jeffrey W.; Letourneau, Steven Payonk

Issue Date:: 2021-10-12

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1859932

Patent Number(s):: 11142824

Application Number:: 16/391,876

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

Show more

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/0272 - {Deposition of sub-layers, e.g. to promote the adhesion of the main coating}
C23C16/14 - Deposition of only one other metal element
C23C16/45527 - {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations}
C23C16/45553 - {characterized by the use of precursors specially adapted for ALD}
C23C16/56 - After-treatment

Show less

DOE Contract Number:: AC02-06CH11357

Resource Type:: Patent

Resource Relation:: Patent File Date: 04/23/2019

Country of Publication:: United States

Language:: English

Citation Formats


                    Mane, Anil U., Choudhury, Devika, Elam, Jeffrey W., and Letourneau, Steven Payonk. Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others.  United States: N. p., 2021. 
        Web.

Copy to clipboard


                    Mane, Anil U., Choudhury, Devika, Elam, Jeffrey W., & Letourneau, Steven Payonk. Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others.  United States.

Copy to clipboard


                    Mane, Anil U., Choudhury, Devika, Elam, Jeffrey W., and Letourneau, Steven Payonk. Tue .  
        "Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others".  United States.  https://www.osti.gov/servlets/purl/1859932.

Copy to clipboard


                    
@article{osti_1859932,

  title        = {Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others},

  author       = {Mane, Anil U. and Choudhury, Devika and Elam, Jeffrey W. and Letourneau, Steven Payonk},

  abstractNote = {An ultra-thin film transition metal dichalcogenide (“TMD”) supported on a support. The TMD is formed from a metal grown by atomic layer deposition (“ALD”) on a substrate. The metal is sulphurized to produce a TMD ultra-thin layer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2021},

  month        = {10}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Fabricating thin-film optoelectronic devices with added potassium
patent-application, November 2015

Chirila, Adrian; Buecheler, Stephan; Pianezzi, Fabian
US Patent Application 14/654464; 20150333200
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150333200

Molybdenum Atomic Layer Deposition Using MoF 6 and Si 2 H 6 as the Reactants
journal, April 2011

Seghete, D.; Rayner, G. B.; Cavanagh, A. S.
Chemistry of Materials, Vol. 23, Issue 7
https://doi.org/10.1021/cm101673u

Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films
journal, May 2013

Yu, Yifei; Li, Chun; Liu, Yi
Scientific Reports, Vol. 3, Issue 1
https://doi.org/10.1038/srep01866

Atomic-Scale Structure of Single-Layer ${MoS}_{2}$ Nanoclusters
journal, January 2000

Helveg, S.; Lauritsen, J. V.; Lægsgaard, E.
Physical Review Letters, Vol. 84, Issue 5
https://doi.org/10.1103/PhysRevLett.84.951

From Bulk to Monolayer MoS2: Evolution of Raman Scattering
journal, January 2012

Li, Hong; Zhang, Qing; Yap, Chin Chong Ray
Advanced Functional Materials, Vol. 22, Issue 7
https://doi.org/10.1002/adfm.201102111

Large-Area Vapor-Phase Growth and Characterization of MoS₂ Atomic Layers on a SiO₂ Substrate
journal, February 2012

Zhan, Yongjie; Liu, Zheng; Najmaei, Sina
Small, Vol. 8, Issue 7, p. 966-971
https://doi.org/10.1002/smll.201102654

Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems
journal, May 2017

Dong, Rui; Kuljanishvili, Irma
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 35, Issue 3
https://doi.org/10.1116/1.4982736

Nucleation and growth during the atomic layer deposition of W on Al2O3 and Al2O3 on W
journal, November 2004

Grubbs, R. K.; Nelson, C. E.; Steinmetz, N. J.
Thin Solid Films, Vol. 467, Issue 1-2
https://doi.org/10.1016/j.tsf.2004.02.099

Synthesis of MoS2 Thin Film by Chemical Vapor Deposition Method and Discharge Characteristics as a Cathode of the Lithium Secondary Battery
journal, August 1992

Imanishi, Nobuyuki; Kanamura, Kiyoshi; Takehara, Zen‐ichiro
Journal of The Electrochemical Society, Vol. 139, Issue 8
https://doi.org/10.1149/1.2221182

Atomic Layer Deposited MoS 2 as a Carbon and Binder Free Anode in Li-ion Battery
journal, November 2014

Nandi, Dip K.; Sen, Uttam K.; Choudhury, Devika
Electrochimica Acta, Vol. 146
https://doi.org/10.1016/j.electacta.2014.09.077

Methods to Deposit and Etch Controlled Thin Layers of Transition Metal Dichalcogenides
patent-application, September 2019

mane, Anil U.; Elam, Jeffrey W.
US Patent Application 16/294797; 20190279870
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20190279870

Single-layer MoS₂ transistors
journal, January 2011

Radisavljevic, B.; Radenovic, A.; Brivio, J.
Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
https://doi.org/10.1038/nnano.2010.279

Emerging Photoluminescence in Monolayer MoS₂
journal, April 2010

Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
Nano Letters, Vol. 10, Issue 4, p. 1271-1275
https://doi.org/10.1021/nl903868w

Atomic layer deposition of tungsten disulphide solid lubricant thin films
journal, December 2004

Scharf, T. W.; Prasad, S. V.; Mayer, T. M.
Journal of Materials Research, Vol. 19, Issue 12
https://doi.org/10.1557/JMR.2004.0459

Low temperature deposition of 2D WS₂ layers from WF₆ and H₂S precursors: impact of reducing agents
journal, January 2015

Delabie, A.; Caymax, M.; Groven, B.
Chemical Communications, Vol. 51, Issue 86
https://doi.org/10.1039/C5CC05272F

Synthesis and Use of Precursors for ALD of Molybdenum or Tungsten Containing Thin Films
patent-application, May 2018

Sarnet, Tina; Hatanpaa, Timo; Ritala, Mikko
US Patent Application 15/569707; 20180127873
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20180127873

Atomic Layer Deposition: An Overview
journal, January 2010

George, Steven M.
Chemical Reviews, Vol. 110, Issue 1, p. 111-131
https://doi.org/10.1021/cr900056b

Crystal orientation and near-interface structure of chemically vapor deposited MoS₂ films
journal, January 1995

Lee, Woo Y.; More, Karren L.
Journal of Materials Research, Vol. 10, Issue 1
https://doi.org/10.1557/JMR.1995.0049

Fabricating thin-film optoelectronic devices with modified surface
patent-application, May 2017

Reinhard, Patrick; Pianezzi, Fabian; Bissig, Benjamin
US Patent Application 15/312718; 20170133547
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20170133547

Reaction mechanism of core–shell MoO ₂ /MoS ₂ nanoflakes via plasma-assisted sulfurization of MoO ₃
journal, May 2016

Kumar, Prabhat; Singh, Megha; Sharma, Rabindar K.
Materials Research Express, Vol. 3, Issue 5
https://doi.org/10.1088/2053-1591/3/5/055021

Selective Molybdenum Deposition by LPCVD
journal, January 1987

Lifshitz, N.
Journal of The Electrochemical Society, Vol. 134, Issue 8
https://doi.org/10.1149/1.2100820

Preparation of MoS₂ thin films by chemical vapor deposition
journal, June 1994

Lee, Woo Y.; Besmann, Theodore M.; Stott, Michael W.
Journal of Materials Research, Vol. 9, Issue 6
https://doi.org/10.1557/JMR.1994.1474

Method of forming by ALD a thin film of formula MYx
patent-application, July 2015

Cadot, Stephane; Martin, Francois; Quadrelli, Elsje
US Patent Application 14/603829; 20150211112
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150211112

Bottom-up synthesis of vertically oriented two-dimensional materials
journal, October 2016

Vilá, R. A.; Momeni, K.; Wang, Q.
2D Materials, Vol. 3, Issue 4
https://doi.org/10.1088/2053-1583/3/4/041003

Preparation of High Concentration Dispersions of Exfoliated MoS ₂ with Increased Flake Size
journal, June 2012

O’Neill, Arlene; Khan, Umar; Coleman, Jonathan N.
Chemistry of Materials, Vol. 24, Issue 12
https://doi.org/10.1021/cm301515z

Self-assembly pattering for fabricating thin-film devices
patent-application, August 2017

Reinhard, Patrick; Bissig, Benjamin; Buecheler, Stephan
US Patent Application 15/510473; 20170243993
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20170243993

Surface Oxidation of Molybdenum Disulfide
journal, September 1955

Ross, Sydney; Sussman, Alan
The Journal of Physical Chemistry, Vol. 59, Issue 9
https://doi.org/10.1021/j150531a020

Recent progress in atomic layer deposition of molybdenum disulfide: a mini review
journal, March 2019

Huang, Yazhou; Liu, Lei
Science China Materials, Vol. 62, Issue 7
https://doi.org/10.1007/s40843-018-9403-8

1T-MoS ₂ , a new metallic modification of molybdenum disulfide
journal, January 1992

Wypych, Fernando; Schöllhorn, Robert
J. Chem. Soc., Chem. Commun., Issue 19
https://doi.org/10.1039/C39920001386

Atomic layer deposition of molybdenum disulfide films using MoF ₆ and H ₂ S
journal, January 2018

Mane, Anil U.; Letourneau, Steven; Mandia, David J.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 36, Issue 1
https://doi.org/10.1116/1.5003423

Methods for Depositing Molybdenum Sulfide
patent-application, March 2021

Wong, Keith T.; Kim, Hyojin
US Patent Application 17/028156; 20210087677
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20210087677

Ultralarge atomically flat template-stripped Au surfaces for scanning probe microscopy
journal, July 1993

Hegner, Martin; Wagner, Peter; Semenza, Giorgio
Surface Science, Vol. 291, Issue 1-2
https://doi.org/10.1016/0039-6028(93)91474-4

Oxidation Effect in Octahedral Hafnium Disulfide Thin Film
journal, December 2015

Chae, Sang Hoon; Jin, Youngjo; Kim, Tae Soo
ACS Nano, Vol. 10, Issue 1
https://doi.org/10.1021/acsnano.5b06680

Atomic Layer Deposition of Emerging 2D Semiconductors, HfS₂ and ZrS₂, for Optoelectronics
journal, August 2019

Mattinen, Miika; Popov, Georgi; Vehkamäki, Marko
Chemistry of Materials, Vol. 31, Issue 15
https://doi.org/10.1021/acs.chemmater.9b01688

Low-Temperature Atomic Layer Deposition of MoS ₂ Films
journal, April 2017

Jurca, Titel; Moody, Michael J.; Henning, Alex
Angewandte Chemie International Edition, Vol. 56, Issue 18
https://doi.org/10.1002/anie.201611838

Novel chemical route for atomic layer deposition of MoS ₂ thin film on SiO ₂ /Si substrate
journal, January 2014

Jin, Zhenyu; Shin, Seokhee; Kwon, Do Hyun
Nanoscale, Vol. 6, Issue 23
https://doi.org/10.1039/C4NR04816D

Fast detection and low power hydrogen sensor using edge-oriented vertically aligned 3-D network of MoS ₂ flakes at room temperature
journal, August 2017

Agrawal, A. V.; Kumar, R.; Venkatesan, S.
Applied Physics Letters, Vol. 111, Issue 9
https://doi.org/10.1063/1.5000825

Continuous ultra-thin MoS₂ films grown by low-temperature physical vapor deposition
journal, June 2014

Muratore, C.; Hu, J. J.; Wang, B.
Applied Physics Letters, Vol. 104, Issue 26
https://doi.org/10.1063/1.4885391

Atomic layer deposition of two dimensional MoS ₂ on 150 mm substrates
journal, March 2016

Valdivia, Arturo; Tweet, Douglas J.; Conley, John F.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 2
https://doi.org/10.1116/1.4941245

Tunable Resistance Coatings
patent-application, October 2013

Elam, Jeffrey W.; Mane, Anil U.
US Patent Application 13/804660; 20130280546
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20130280546

Atomic layer deposition of a MoS ₂ film
journal, January 2014

Tan, Lee Kheng; Liu, Bo; Teng, Jing Hua
Nanoscale, Vol. 6, Issue 18
https://doi.org/10.1039/C4NR02451F

Transition Metal–MoS2 Reactions: Review and Thermodynamic Predictions
journal, August 2015

Domask, A. C.; Gurunathan, R. L.; Mohney, S. E.
Journal of Electronic Materials, Vol. 44, Issue 11
https://doi.org/10.1007/s11664-015-3956-5

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013

Chhowalla, Manish; Shin, Hyeon Suk; Eda, Goki
Nature Chemistry, Vol. 5, Issue 4, p. 263-275
https://doi.org/10.1038/nchem.1589

MoS2 thin film and method for manufacturing same
patent-application, June 2016

Min, Yo-Sep
US Patent Application 14/908863; 20160168694
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20160168694

Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
journal, March 2016

Jang, Yujin; Yeo, Seungmin; Lee, Han-Bo-Ram
Applied Surface Science, Vol. 365
https://doi.org/10.1016/j.apsusc.2016.01.038

Photoluminescence from Chemically Exfoliated MoS₂
journal, December 2011

Eda, Goki; Yamaguchi, Hisato; Voiry, Damien
Nano Letters, Vol. 11, Issue 12, p. 5111-5116
https://doi.org/10.1021/nl201874w

Electronic device and method for fabricating the same
patent-application, January 2016

Kim, Seong-Hyun
US Patent Application 14/571235; 20160005963
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20160005963

Atomic Layer Deposition of Crystalline MoS ₂ Thin Films: New Molybdenum Precursor for Low-Temperature Film Growth
journal, March 2017

Mattinen, Miika; Hatanpää, Timo; Sarnet, Tiina
Advanced Materials Interfaces, Vol. 4, Issue 18
https://doi.org/10.1002/admi.201700123

Atomic layer deposition of MoS ₂ thin films
journal, February 2015

Browning, Robert; Padigi, Prasanna; Solanki, Raj
Materials Research Express, Vol. 2, Issue 3
https://doi.org/10.1088/2053-1591/2/3/035006

Inkjet Printing of MoS ₂
journal, August 2014

Li, Jiantong; Naiini, Maziar M.; Vaziri, Sam
Advanced Functional Materials, Vol. 24, Issue 41
https://doi.org/10.1002/adfm.201400984

Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition
journal, August 2002

Elam, J. W.; Groner, M. D.; George, S. M.
Review of Scientific Instruments, Vol. 73, Issue 8, p. 2981-2987
https://doi.org/10.1063/1.1490410

Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth
journal, October 2016

Wu, Chong-Rong; Chang, Xiang-Rui; Chu, Tung-Wei
Nano Letters, Vol. 16, Issue 11
https://doi.org/10.1021/acs.nanolett.6b03353

Method for synthesis of transition metal chalcogenide
patent-application, May 2016

Kim, Hyungjun; Kim, Youngjun; Song, Jeong-Gyu
US Patent Application 14/932668; 20160122868
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20160122868

Method for synthesis of two-dimensional dichalcogenide semiconductors
patent-application, January 2017

Cannara, Rachel; Mullen, Emma Rae; Sharifi, Fred
US Patent Application 15/204875; 20170011915
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20170011915

Single-layer MoS2
journal, April 1986

Joensen, Per; Frindt, R. F.; Morrison, S. Roy
Materials Research Bulletin, Vol. 21, Issue 4
https://doi.org/10.1016/0025-5408(86)90011-5

A review of recent advances in solid film lubrication
journal, March 1987

Spalvins, T.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 5, Issue 2
https://doi.org/10.1116/1.574106

2D Crystal Hetero-Structures and Manufacturing Methods Thereof
patent-application, September 2018

Lin, Shih-Yen; Lee, Si-Chen; Pan, Samuel C.
US Patent Application 15/868282; 20180269291
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20180269291

Conducting MoS ₂ Nanosheets as Catalysts for Hydrogen Evolution Reaction
journal, November 2013

Voiry, Damien; Salehi, Maryam; Silva, Rafael
Nano Letters, Vol. 13, Issue 12
https://doi.org/10.1021/nl403661s

In situ growth of double-layer MoO3/MoS2 film from MoS2 for hole-transport layers in organic solar cell
journal, January 2014

Qin, Pingli; Fang, Guojia; Ke, Weijun
Journal of Materials Chemistry A, Vol. 2, Issue 8
https://doi.org/10.1039/c3ta13579a

Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004

Novoselov, K. S.
Science, Vol. 306, Issue 5696, p. 666-669
https://doi.org/10.1126/science.1102896

Transition metal dichalcogenide alloy and method of manufacturing the same
patent-application, September 2017

Kim, Hyungjun; Ko, Kyung Yong; Park, Kyunam
US Patent Application 15/421496; 20170267527
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20170267527

Method of Producing Transition Metal Dichalcogenide Layer
patent-application, August 2017

Caymax, Matty; Heyne, Markus; Delabie, Annelies
US Patent Application 15/039407; 20170250075
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20170250075

Method for Manufacturing Two-Dimensional Transition Metal Dichalcogemide Thin Film
patent-application, April 2018

Kang, Sang Woo; Mun, Ji Hun
US Patent Application 15/562545; 20180105930
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20180105930

Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides
journal, February 1982

Kam, K. K.; Parkinson, B. A.
The Journal of Physical Chemistry, Vol. 86, Issue 4
https://doi.org/10.1021/j100393a010

Advances in the Synthesis of Inorganic Nanotubes and Fullerene-Like Nanoparticles
journal, November 2003

Tenne, Reshef
Angewandte Chemie International Edition, Vol. 42, Issue 42
https://doi.org/10.1002/anie.200301651

Synthesis of Large-Area Highly Crystalline Monolayer Molybdenum Disulfide with Tunable Grain Size in a H ₂ Atmosphere
journal, September 2015

Feng, Yulin; Zhang, Kailiang; Wang, Fang
ACS Applied Materials & Interfaces, Vol. 7, Issue 40
https://doi.org/10.1021/acsami.5b07038

Wafer-scale growth of MoS ₂ thin films by atomic layer deposition
journal, January 2016

Pyeon, Jung Joon; Kim, Soo Hyun; Jeong, Doo Seok
Nanoscale, Vol. 8, Issue 20
https://doi.org/10.1039/C6NR01346E

Growth, structure, and tribological behavior of atomic layer-deposited tungsten disulphide solid lubricant coatings with applications to MEMS
journal, October 2006

Scharf, T.; Prasad, S.; Dugger, M.
Acta Materialia, Vol. 54, Issue 18
https://doi.org/10.1016/j.actamat.2006.06.009

Area‐Selective Growth of HfS ₂ Thin Films via Atomic Layer Deposition at Low Temperature
journal, October 2020

Cao, Yuanyuan; Wähler, Tobias; Park, Hyoungwon
Advanced Materials Interfaces, Vol. 7, Issue 23
https://doi.org/10.1002/admi.202001493