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Title: Hybrid phonon-enhanced optical absorbers and emitters

Abstract

A semiconductor optical device is comprised of a phonon donating material structurally connected to an indirect bandgap material to improve absorption and emission of light in the indirect bandgap material. An excitation energy source provides excitation radiation to the semiconductor optical device to excite electrons in the semiconductor optical device. Phonons from the phonon donating material present in the indirect bandgap material provide a mechanism for increased rates of electron-hole generation and recombination, and electrical leads provide an electrical connection to the semiconductor optical device.

Inventors:
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1840500
Patent Number(s):
11133433
Application Number:
16/751,729
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 01/24/2020
Country of Publication:
United States
Language:
English

Citation Formats

Husko, Chad. Hybrid phonon-enhanced optical absorbers and emitters. United States: N. p., 2021. Web.
Husko, Chad. Hybrid phonon-enhanced optical absorbers and emitters. United States.
Husko, Chad. Tue . "Hybrid phonon-enhanced optical absorbers and emitters". United States. https://www.osti.gov/servlets/purl/1840500.
@article{osti_1840500,
title = {Hybrid phonon-enhanced optical absorbers and emitters},
author = {Husko, Chad},
abstractNote = {A semiconductor optical device is comprised of a phonon donating material structurally connected to an indirect bandgap material to improve absorption and emission of light in the indirect bandgap material. An excitation energy source provides excitation radiation to the semiconductor optical device to excite electrons in the semiconductor optical device. Phonons from the phonon donating material present in the indirect bandgap material provide a mechanism for increased rates of electron-hole generation and recombination, and electrical leads provide an electrical connection to the semiconductor optical device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {9}
}

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